Lanting Ji, Wei Chen, Yang Gao, Yan Xu, Chi Wu, Xibin Wang, Yunji Yi, Baohua Li, Xiaoqiang Sun, Daming Zhang. Low-power electro–optic phase modulator based on multilayer graphene/silicon nitride waveguide[J]. Chinese Physics B, 2020, 29(8):
- Chinese Physics B
- Vol. 29, Issue 8, (2020)
Fig. 1. (a) Three-dimensional (3D) and (b) cross-sectional view of the graphene-based Si3N4 waveguide electro–optic modulator.
Fig. 2. In-plane permittivity changes with Fermi level μ c of graphene at 1550 nm.
Fig. 3. Im(N eff) of SiN waveguide as a function of h SiN and w SiN when μ c is 0 eV (λ = 1550 nm).
Fig. 4. Cross-section of (a) two-layer, (c) four-layer, and (e) six-layer GSNW configurations. Panels (b), (d), and (f) show field distributions of panels (a), (c), and (e), respectively.
Fig. 5. (a) Real and (b) imaginary parts of N eff as a function of Fermi level for different graphene layers.
Fig. 6. Illustration of (a) quasi-linear variation of the optical phase, and (b) optical MPA versus Fermi levels for different numbers of graphene layer.
Fig. 7. Optical transmission of the MZI modulator changes with applied gate voltages for the 80-μm-long graphene with different layers.
Fig. 8. Illustration of (a) quasi-linear variation of the optical phase, and (b) insertion loss versus Fermi levels for different graphene modulation lengths.
Fig. 9. Normalized transmission of the MZI modulator changes with applied gate voltage for the two-layer graphene at different modulating lengths.
Fig. 10. Equivalent electrical circuits of (a) two-, (b) four-, and (c) six-layer graphene modulators.
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Table 1. Modulating performance of different GSNW modulators.
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Table 2. Performance comparison between graphene-based phase modulators.
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