• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Lanting Ji1、2, Wei Chen1, Yang Gao1, Yan Xu1, Chi Wu2, Xibin Wang1, Yunji Yi1, Baohua Li1, Xiaoqiang Sun1、†, and Daming Zhang1
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 3002, China
  • 2Institute of Marine Science and Technology, Shandong University, Qingdao 50100, China
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    DOI: 10.1088/1674-1056/ab943b Cite this Article
    Lanting Ji, Wei Chen, Yang Gao, Yan Xu, Chi Wu, Xibin Wang, Yunji Yi, Baohua Li, Xiaoqiang Sun, Daming Zhang. Low-power electro–optic phase modulator based on multilayer graphene/silicon nitride waveguide[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less

    Abstract

    Electro–optic modulator is a key component for on-chip optical signal processing. An electro–optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation. Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode. The impact of multilayer graphene on the performance of phase modulator is studied comprehensively. Simulation results show that the modulation efficiency improves with the increment of graphene layer number, as well as the modulation length. The 3-dB bandwidth of around 48 GHz is independent of graphene layer number and length. Compared to modulator with two- or four-layer graphene, the six-layer graphene/silicon nitride waveguide modulator can realize π phase shift at a low-power consumption of 14 fJ/bit when the modulation length is 240 μm.
    Lanting Ji, Wei Chen, Yang Gao, Yan Xu, Chi Wu, Xibin Wang, Yunji Yi, Baohua Li, Xiaoqiang Sun, Daming Zhang. Low-power electro–optic phase modulator based on multilayer graphene/silicon nitride waveguide[J]. Chinese Physics B, 2020, 29(8):
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