• Acta Physica Sinica
  • Vol. 68, Issue 10, 108501-1 (2019)
Qun-Gang Ma1、2, Liu-Fei Zhou3, Yue Yu3, Guo-Yong Ma3, and Sheng-Dong Zhang1、2、*
Author Affiliations
  • 1School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
  • 2School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • 3Nanjing CEC Panda FPD Technology Co., Ltd., Nanjing 210033, China
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    DOI: 10.7498/aps.68.20190265 Cite this Article
    Qun-Gang Ma, Liu-Fei Zhou, Yue Yu, Guo-Yong Ma, Sheng-Dong Zhang. Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane[J]. Acta Physica Sinica, 2019, 68(10): 108501-1 Copy Citation Text show less
    References

    [1] Marko S, Geert H, Chen S H, Kris M, Dimitri L 2018 Electrical Overstress/electrostatic Discharge Symposium Reno, September 23-28, 2018 p1

    [2] Liu Y, Chen R, Li B, En Y F, Chen Y Q[J]. IEEE Trans. Electron Dev., 1-5, 99(2017).

    [3] Tai Y H, Chiu H L, Chou L S[J]. J. Disp. Technol., 9, 613(2013).

    [4] Scholz M, Steudel S, Myny K, Chen S, Boschke R, Hellings G, Linten D 2016 Electrical Overstress/electrostatic Discharge Symposium Garden Grove, September 11-16, 2016 pp1-7.

    [5] Ning H L, Hu S B, Zhu F, Yao R H, Xu M, Zou J H, Tao H, Xu R X, Xu H, Wang L, Lan L F, Peng J B[J]. Acta Phys. Sin., 64, 126103(2015).

    [6] Kim L Y, Kwon O K[J]. IEEE Electr. Device Lett., 39, 43(2018).

    [7] Lin C L, Wu C E, Chen F H, Lai P C, Cheng M H[J]. IEEE Trans. Electron Dev., 63, 2405(2016).

    [8] Geng D, Chen Y F, Mativenga M, Jin J[J]. IEEE Electr. Device Lett., 36, 805(2015).

    [9] Chen W, Barnaby H J, Kozicki M N[J]. IEEE Electr. Device Lett., 37, 580(2016).

    [10] Choi Z S, Mönig R, Thompson C V[J]. J. Appl. Phys., 102, 387(2007).

    [11] Lee K W, Wang H, Bea J C, Murugesan M[J]. IEEE Electr. Device Lett., 35, 114(2014).

    [12] Xiang L, Wang L L, Ning C, Hu H, Wei Y, Wang K, Yoo S Y, Zhang S D[J]. IEEE Trans. Electron Dev., 61, 4299(2014).

    [13] Han K L, Ok K C, Cho H S, Oh S, Park J S[J]. Appl. Phys. Lett., 111, 063502(2017).

    [14] Tari A, Lee C H, Wong W S[J]. Appl. Phys. Lett., 107, 1679(2015).

    [15] Hung S C, Chiang C H, Li Y M[J]. J. Display Tech., 11, 640(2015).

    [16] Hu C K, Gignac L M, Lian G 2018 IEEE International Electron Devices Meeting (IEDM) San Francisco, December 1-5, 2018

    [17] Thermadam S P, Bhagat S K, Alford T L, Sakaguchi Y, Kozicki M N, Mitkova M[J]. Thin Solid Films, 518, 3293(2010).

    [18] Toumi S, Ouennoughi Z, Strenger K C[J]. Solid State Electron., 122, 56(2016).

    [19] Christen T[J]. IEEE T. Dielect. E. I., 23, 3712(2017).

    [20] Choi S, Jang J, Kang H, Baeck J H, Bae J U, Park K S, Yoon S Y, Kang I B, Kim D M, Choi S J, Kim Y S, Oh S, Kim D H[J]. IEEE Electr. Device Lett., 38, 580(2017).

    [21] Jang J, Kim D G, Kim D M, Choi S J, Kim D H[J]. Appl. Phys. Lett., 105, 1117(2014).

    [22] Qiang L, Yao R H[J]. Acta Phys. Sin., 61, 087303(2012).

    [23] Deng X Q, Deng L W, He Y N, Liao C W, Huang S X, Luo H[J]. Acta Phys. Sin., 68, 057302(2019).

    [24] Wang W, Xu G W, Chowdhury M D H, Wang H, Um J K, Ji Z Y, Gao N, Zong Z W, Bi C, Lu C Y, Lu N D, Banerjee W, Feng J F, Li L, Kadashchuk A, Jang J, Liu M[J]. Phys. Rev. B, 98, 245(2018).

    Qun-Gang Ma, Liu-Fei Zhou, Yue Yu, Guo-Yong Ma, Sheng-Dong Zhang. Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane[J]. Acta Physica Sinica, 2019, 68(10): 108501-1
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