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Journals >Acta Physica Sinica >Volume 69 >Issue 5 >Page 054204-1 > Article

Acta Physica Sinica
Vol. 69, Issue 5, 054204-1 (2020)

Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication

Ji-Ye Zhang^1、2, Jian-Wei Zhang^1、*, Yu-Gang Zeng¹, Jun Zhang¹, Yong-Qiang Ning¹, Xing Zhang¹, Li Qin¹, Yun Liu¹, and Li-Jun Wang¹

Author Affiliations

¹State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.7498/aps.69.20191787 Cite this Article

Ji-Ye Zhang, Jian-Wei Zhang, Yu-Gang Zeng, Jun Zhang, Yong-Qiang Ning, Xing Zhang, Li Qin, Yun Liu, Li-Jun Wang. Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication[J]. Acta Physica Sinica, 2020, 69(5): 054204-1 Copy Citation Text

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References

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Ji-Ye Zhang, Jian-Wei Zhang, Yu-Gang Zeng, Jun Zhang, Yong-Qiang Ning, Xing Zhang, Li Qin, Yun Liu, Li-Jun Wang. Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication[J]. Acta Physica Sinica, 2020, 69(5): 054204-1

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