[1] Nagai H, Noguchi Y. Crack formation in InP-GaxIn1-xAs-InP double-heterostructure fabrication [J]. Applied Physics Letters, 1976, 29(11): 740-741.
[2] Bandy S, Nishimoto C, Hyder S, et al. Saturation velocity determination for In0.53Ga0.17As field-effect transistors [J]. Applied Physics Letters, 1981, 38(10): 817-819.
[3] Murray S L, Newman F D, Murray C S, et al. MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion [J]. Semiconductor Science and Technology, 2003, 18(5): s202-s208.
[4] Bachmann K J, Shay J L. An InGaAs detector for the 1.0-1.7 μm wavelength range [J]. Applied Physics Letters, 1978, 32(7):446-448.
[5] Hoogeveen R W M, Vander A R J, Goede A P H. Extended wavelength InGaAs infrared (1.0-2.4 μm ) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere [J]. Infrared Physics and Technology, 2001, 42(1):1-16.
[6] Toikkanen L, Hakkarainen T, Schramm A, et al. Metamorphic growth of tensile strained GaInP on GaAs substrate [J]. Journal of Crystal Growth, 2010, 312(21):3105-3110.
[7] Gu Y, Zhang Y G, Wang K, et al. Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors [J]. Journal of Crystal Growth, 2013, 378: 65-68.
[8] Globisch B, Dietz R J B, Stanze D, et al. Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs [J]. Applied Physics Letters, 2014, 104(17):1-4.
[9] Shiryaev S Y, Jensen F, Petersen J W. On the nature of cross-hatch patterns on compositionally graded SixGe1-x alloy layers [J]. Applied Physics Letters, 1994, 64(24):3305-3307.
[10] Hudait M K, Lin Y, Wilt D M, et al. High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy [J]. Applied Physics Letters, 2003, 83(3):587-587.
[11] Fewster P F. X-ray diffraction from low-dimensional structures [J]. Semiconductor Science and Technology, 1993, 8(11):1915-1934.
[12] Ma Y J, Gu Y, Zhang Y G, et al. Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density [J]. Journal of Materials Chemistry C, 2015, 3(12): 2872-2880.
[13] Oliver J D, Eastman L F, Kirchner P D, et al. Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applications [J]. Journal of Crystal Growth, 1981, 54(1):64-68.
[14] Matsuoka T, Kobayashi E, Taniguchi K, et al. Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures [J]. Japanese Journal of Applied Physics, 1990, 29(10):2017-2025.