• Journal of Infrared and Millimeter Waves
  • Vol. 37, Issue 6, 699 (2018)
ZHANG Jian1、2, CHEN Xing-You1, GU Yi1、*, Gong Qian1, HUANG Wei-Guo1、3, DU Ben1、2, HUANG Hua1, MA Ying-Jie1, and ZHANG Yong-Gang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2018.06.011 Cite this Article
    ZHANG Jian, CHEN Xing-You, GU Yi, Gong Qian, HUANG Wei-Guo, DU Ben, HUANG Hua, MA Ying-Jie, ZHANG Yong-Gang. Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 699 Copy Citation Text show less
    References

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    [14] Matsuoka T, Kobayashi E, Taniguchi K, et al. Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures [J]. Japanese Journal of Applied Physics, 1990, 29(10):2017-2025.

    ZHANG Jian, CHEN Xing-You, GU Yi, Gong Qian, HUANG Wei-Guo, DU Ben, HUANG Hua, MA Ying-Jie, ZHANG Yong-Gang. Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 699
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