[1] Zhang Z X, Zou S C[J]. Chin. Sci. Bull., 62, 1004(2017).
[3] Dodd P E, Shaneyfelt A R, Horn K M, Walsh D S, Hash G L, Hill T A, Draper B L, Schwank J R, Sexton F W, Winokur P S[J]. IEEE Trans. Nucl. Sci., 48, 1893(2002).
[4] Bartra W C, Vladimirescu A, Reis R[J]. IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 133(2015).
[6] Thakral B, Bakshi G, Kushwaha A K, Manica [J]. International Conference on Reliability Optimization and Information Technology (ICROIT), 487(2014).
[7] Pelella M M, Fossum J G, Suh D, Krishnan S, Jenkins K A[J]. IEEE International SOI Conference Proceedings, 8(1995).
[9] Narayanan M R, Nashash H A[J]. The 11th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 61(2016).
[10] Younis D, Madathumpadical N, Al-Nashash H[J]. The 7th International Conference on Modeling, Simulation, and Applied Optimization (ICMSAO), 1(2017).
[12] Cai L, Liu J C, Qin Y C, Li L L, Guo G, Shi S T, Wu Z Y, Chi Y Q, Hui N, Fan H, Shen D J, He A L[J]. Atomic Energy Sci. Technol., 52, 4(2018).
[13] Liu T, Liu J, Geng C, Zhang Z G, Zhao F Z, Tong T, Sun Y M, Su H, Yao H J, Gu S, Xi K, Luo J, Liu G, Han Z S, Hou M D[J]. European Conference on Radiation and ITS Effects on Components and Systems, 1(2013).
[14] Boufouss E, Alvarado J, Flandre D[J]. International Conference on High Temperature Electronics (HiTEC 2010), 77(2010).
[15] Li D W, Qin J R, Chen S M[J]. Chin. Phys. B, 22, 586(2013).
[16] [J]. Nanoscale Integration and Modeling Group(2018). http://ptm.asu.edu/
[17] [J]. Synopsys Inc.(2018). https://www.synopsys.com/silicon/tcad.html
[19] Liu B W, Chen J J, Chen S M, Chi Y Q[J]. Acta Phys. Sin., 61, 096102(2012).
[21] Liu E K, Zhu B S, Luo J S[J]. The Physics of Semiconductors 7th Edition, 7, 97-100(2011).
[23] Chen S M, Liang B, Liu B, Liu Z[J]. IEEE Trans. Nucl. Sci., 55, 2914(2008).
[24] Liu B W, Chen S M, Liang B[J]. J. Semicond., 30, 54(2009).