Zhan-Zhan Gao, Peng-Fei Hou, Hong-Xia Guo, Bo Li, Hong-Jia Song, Jin-Bin Wang, Xiang-Li Zhong. Temperature dependence of single-event transient response in devices with selective-buried-oxide structure [J]. Acta Physica Sinica, 2019, 68(4): 048501-1
- Acta Physica Sinica
- Vol. 68, Issue 4, 048501-1 (2019)
Fig. 1. Device physical models: (a) The whole structure of devices; (b) the cross section of SELBOX SOI device; (c) the cross section of floating-body device.器件物理模型 (a) 器件整体模型; (b) SELBOX SOI器件有源区截面; (c) 浮体器件有源区截面
Fig. 2. Three-level inverter chains.三级反相器链
Fig. 3. Single-event-transient pulse of SOI NMOS and output 3 at room temperature: (a) Current pulse; (b) voltage pulse.室温下SOI NMOS及输出节点3的单粒子瞬态脉冲 (a) 瞬态电流脉冲; (b) 瞬态电压脉冲
Fig. 4. Single-event-transient pulse of SOI PMOS and output 3 at room temperature: (a) The current pulse; (b) the voltage pulse.室温下SOI PMOS及输出节点3的单粒子瞬态脉冲 (a) 瞬态电流脉冲; (b) 瞬态电压脉冲
Fig. 5. The pulsewidth of SOI NMOS and output 3 at different temperatures: (a) Changes of the current pulsewidth; (b) changes of the voltage pulsewidth.SOI NMOS及输出节点3的脉冲宽度随温度的变化 (a) 瞬态电流脉冲宽度的变化; (b) 瞬态电压脉冲宽度的变化
Fig. 6. The pulsewidth of SOI PMOS and output 3 at different temperatures: (a) Changes of the current pulsewidth; (b) changes of the voltage pulsewidth.SOI PMOS及输出节点3的脉冲宽度随温度的变化 (a) 瞬态电流脉冲宽度的变化; (b) 瞬态电压脉冲宽度的变化
Fig. 7. The charge collection of SOI NMOS at different temperatures: (a) Floating-body device; (b) SELBOX SOI device.在不同温度下SOI NMOS的电荷收集量 (a) 浮体器件; (b) SELBOX SOI器件
Fig. 8. The charge collection of SOI PMOS at different temperatures: (a) Floating-body device; (b) SELBOX SOI device.在不同温度下SOI PMOS的电荷收集量 (a) 浮体器件; (b) SELBOX SOI器件
Fig. 9. The bipolar amplification effect of SOI devices: (a) Floating-body device; (b) SELBOX SOI device.SOI器件产生双极放大的原理 (a) 浮体器件; (b) SELBOX SOI器件
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Table 1. Technologic parameters of SOI devices.
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