• Acta Photonica Sinica
  • Vol. 50, Issue 5, 151 (2021)
Bin WANG, Degui SUN*, and Hongpeng SHANG
Author Affiliations
  • School of Science, Changchun University of Science and Technology, Changchun130022, China
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    DOI: 10.3788/gzxb20215005.0506005 Cite this Article
    Bin WANG, Degui SUN, Hongpeng SHANG. Investigation for Relationship between Sidewall Roughness of Silicon-on-insulator Waveguide and Loss of Guided-mode[J]. Acta Photonica Sinica, 2021, 50(5): 151 Copy Citation Text show less
    Perspective view of a schematic SOI waveguide
    Fig. 1. Perspective view of a schematic SOI waveguide
    Numerical simulations for the OPL coefficient α3D vs SWR of SOI waveguide for TE- and TM-mode
    Fig. 5. Numerical simulations for the OPL coefficient α3D vs SWR of SOI waveguide for TE- and TM-mode
    Propagation losses test of three SOI waveguides and the responses of F-P cavity formed by the waveguide channel to temperature change
    Fig. 6. Propagation losses test of three SOI waveguides and the responses of F-P cavity formed by the waveguide channel to temperature change
    Bin WANG, Degui SUN, Hongpeng SHANG. Investigation for Relationship between Sidewall Roughness of Silicon-on-insulator Waveguide and Loss of Guided-mode[J]. Acta Photonica Sinica, 2021, 50(5): 151
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