• Chinese Journal of Quantum Electronics
  • Vol. 32, Issue 3, 371 (2015)
Feng XIAO*, Shitao YUAN, Zhixiang HUANG, and Xianliang WU
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2015.03.018 Cite this Article
    XIAO Feng, YUAN Shitao, HUANG Zhixiang, WU Xianliang. Numerical simulation for polymer/fullerene bulk heterojunction solar cells[J]. Chinese Journal of Quantum Electronics, 2015, 32(3): 371 Copy Citation Text show less

    Abstract

    A numerical device model was introduced that consistently describes the current-voltage characteristics of polymer/fullerene bulk heterojunction solar cells. Bimolecular recombination and temperature and field dependent generation mechanism of free charges were also presented. It was demonstrated that in poly based solar cells space-charge effects only play a minor role, leading to a relatively constant electric field in the device. Furthermore, at short-circuit conditions only 7% of all free carriers are lost due to bimolecular recombination. The model predicts that an increased hole mobility together with a reduction of the acceptor strength of 0.5 eV will lead to a maximum attainable efficiency of 5.5% in the PPV/PCBM-based solar cells.
    XIAO Feng, YUAN Shitao, HUANG Zhixiang, WU Xianliang. Numerical simulation for polymer/fullerene bulk heterojunction solar cells[J]. Chinese Journal of Quantum Electronics, 2015, 32(3): 371
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