• Infrared and Laser Engineering
  • Vol. 47, Issue 10, 1003002 (2018)
Cao Yuxuan1、2, Shu Shili1, Sun Fangyuan1、2, Zhao Yufei1、2, Tong Cunzhu1, and Wang Lijun1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201847.1003002 Cite this Article
    Cao Yuxuan, Shu Shili, Sun Fangyuan, Zhao Yufei, Tong Cunzhu, Wang Lijun. Development of beam combining technology in mid-infrared semiconductor lasers(invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003002 Copy Citation Text show less

    Abstract

    Mid-infrared semiconductor lasers possess the advantages of small volume and high efficiency and have important application prospects in the field of environmental detection, space communication and military defense. However, the output power of mid-infrared semiconductor laser device is low, which limits its application in the above fields. Laser beam combining technology is an important approach to enhance the power of mid-infrared semiconductor lasers. In this paper, several beam combining methods and the latest progress of mid-infrared semiconductor lasers were introduced in detail.
    Cao Yuxuan, Shu Shili, Sun Fangyuan, Zhao Yufei, Tong Cunzhu, Wang Lijun. Development of beam combining technology in mid-infrared semiconductor lasers(invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003002
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