• Chinese Journal of Lasers
  • Vol. 25, Issue 5, 385 (1998)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-frequency and High-power InGaAsP/InP SPB-BC Lasers[J]. Chinese Journal of Lasers, 1998, 25(5): 385 Copy Citation Text show less
    References

    [1] E. Oomura, H. Higuchi. Y. Sakakibara el al.. InGaAsP/InP buried crescent laser diode emitting at 1.3 μm wavelength. IEEE J. Quant. Electron,1984, QE-20(8),866~874

    [2] H. Horikawa, H. Wada, Y. Matsui et al.. High-power and high-speed semi-insulating blocked V-grooved inner-stripe lasers at 1.3 μm wavelength fabricated on p-InP substrates. Appl. Phys. Lett., 1989,54(12),1077~1079

    [3] H. Wada, H. Horikawa,Y. Matsui et al.. High-power and high-speed 1.3 μm V-grooved inner-stripe lasers with new semi-insulating current confinement structures on p-InP substrates. Appl. Phys. Lett.,1989,55(8):723~725

    [4] W.-H. Cheng, A. Mar, J. E. Bowers et al.. High-speed 1.3 μm InGaAsP Fabry-Perot lasers for digital and analog applications. IEEE J. Quant. Electron., 1993,29(6),1660~1667

    [5] W.-H. Cheng, C. B. Su, K. D. Buehring et al.. High-speed and high-power 1.3 μm InGaAaP buried crescent injection lasers with semi-insulating current blocking layers. Appl. Phys. Lett.,1987,51(22): 1783~1785

    [6] J. P. Donnelly, C. E. Hurwitz. Proton bombardment in InP. Solid-State Electronics, 1977, 20:727~730

    [7] S. M. Szc. Physics of Semiconductor Dcviccs. John Wiley and Sons, Inc.,1969. 140

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-frequency and High-power InGaAsP/InP SPB-BC Lasers[J]. Chinese Journal of Lasers, 1998, 25(5): 385
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