High-frequency and High-power InGaAsP/InP SPB-BC Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 25 >Issue 5 >Page 385 > Article

Chinese Journal of Lasers
Vol. 25, Issue 5, 385 (1998)

High-frequency and High-power InGaAsP/InP SPB-BC Lasers

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-frequency and High-power InGaAsP/InP SPB-BC Lasers[J]. Chinese Journal of Lasers, 1998, 25(5): 385 Copy Citation Text

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Abstract

A high-frequency and high-power InGaAsP/InP laser structure was establishedon the basis of buried crescent lasers by using the proton bombardment technique-theselected proton bombarded the buried crescent laser (SPB-BC). At room temperature, the maximum CW output power of 80 mW and a 3 dB modulation bandwidth of 6 GHz were obtained for a laser with a cavity 500 (am long on a p-type InP substrate.

Keywords

modulation bandwidth parasitic capacitance selective proton bombardment

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-frequency and High-power InGaAsP/InP SPB-BC Lasers[J]. Chinese Journal of Lasers, 1998, 25(5): 385

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