• Laser & Optoelectronics Progress
  • Vol. 59, Issue 17, 1716004 (2022)
Huican Ouyang, Lin Shang, Chaoming Xu, Song Liu, Xin Huang, Biao Huang, Dou Wang, and Bingshe Xu*
Author Affiliations
  • Science & Technology Institute of Atomic and Molecular Science of Materials, Shaanxi University, Xi’an 710000, Shaanxi , China
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    DOI: 10.3788/LOP202259.1716004 Cite this Article Set citation alerts
    Huican Ouyang, Lin Shang, Chaoming Xu, Song Liu, Xin Huang, Biao Huang, Dou Wang, Bingshe Xu. Conversion Characteristics and Damage of GaAs Solar Cells Irradiated by 532 nm Continuous Laser[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716004 Copy Citation Text show less
    References

    [1] Li D H. Research on the development of GaAs solar cells in China[J]. China Metal Bulletin, 39(2018).

    [2] Wu X L. The development trend of photovoltaic cell research is briefly described[J]. Science and Technology Innovation Herald, 9, 35(2012).

    [3] Cheng K W E, Lu Y. Development of a contactless power converter[C], 786-791(2002).

    [4] Green A W. 10 kHz inductively coupled power transfer-concept and control[C], 694-699(1994).

    [5] Glaser P E. Power from the sun: its future[J]. Science, 162, 857-861(1968).

    [6] Sun C W[M]. Laser irradiation effect(2002).

    [7] Zhai H, Xie H Q, Wu Z H et al. Influence of measurement methods on photovoltaic parameters of solar cells[J]. Acta Energiae Solaris Sinica, 42, 36-42(2021).

    [8] Li W, Wu L Y, Wang W P et al. Power conversion efficiency of photovoltaic cells in semiconductor laser wireless power transmission[J]. High Power Laser and Particle Beams, 30, 119001(2018).

    [9] Qi L, Zhang R Z. Damage characteristics of three-junction GaAs cells irradiated by composite pulsed laser[J]. Acta Optica Sinica, 40, 0514002(2020).

    [10] Hua W S, Liu X G, Zhang D M. Laser & Infrared, 46, 1463-1466(2016).

    [11] Guo F, Zhu R Z, Wang A, Cheng X A. Damage effect on CMOS detector irradiated by single-pulse laser[J]. Proceedings of SPIE, 8905, 890521(2013).

    [12] Chen W Z, Zhang F Y, Zhang R et al. Defect detection of solar cells based on electroluminescence imaging[J]. Chinese Journal of Luminescence, 34, 1028-1034(2013).

    [13] Yan Y Y, Fang M H, Tang X B et al. Effect of 150 keV proton irradiation on the performance of GaAs solar cells[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 451, 49-54(2019).

    [14] Wang J L, Yi T C, Zheng Y et al. 3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells[J]. IOP Conference Series: Earth and Environmental Science, 93, 012060(2017).

    Huican Ouyang, Lin Shang, Chaoming Xu, Song Liu, Xin Huang, Biao Huang, Dou Wang, Bingshe Xu. Conversion Characteristics and Damage of GaAs Solar Cells Irradiated by 532 nm Continuous Laser[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716004
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