• Infrared and Laser Engineering
  • Vol. 51, Issue 3, 20210941 (2022)
Chunlei Yu1、2, Haimei Gong1、2、*, Xue Li1、2、*, Songlei Huang1、2, Bo Yang1、2, Xianliang Zhu1、2, Xiumei Shao1、2, Tao Li1、2, and Yi Gu1、2
Author Affiliations
  • 1State Key Laboratory of Sensor Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences, Shanghai 200083, China
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    DOI: 10.3788/IRLA20210941 Cite this Article
    Chunlei Yu, Haimei Gong, Xue Li, Songlei Huang, Bo Yang, Xianliang Zhu, Xiumei Shao, Tao Li, Yi Gu. 2560×2048 short-wave infrared InGaAs focal plane detector (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20210941 Copy Citation Text show less
    Profile structure of planar In0.53Ga0.47As detector
    Fig. 1. Profile structure of planar In0.53Ga0.47As detector
    C-V curve of detectors with different doping absorption layers
    Fig. 2. C-V curve of detectors with different doping absorption layers
    Dark current density of InGaAs detectors with different sizes
    Fig. 3. Dark current density of InGaAs detectors with different sizes
    Relationship between dark current density and P/A
    Fig. 4. Relationship between dark current density and P/A
    Dark current density of different pitch array devices at room temperature
    Fig. 5. Dark current density of different pitch array devices at room temperature
    Change of chip flatness with the increase of balance film thickness
    Fig. 6. Change of chip flatness with the increase of balance film thickness
    Influence of the morphology and consistency of the indium pillar bumps on the connectivity rate
    Fig. 7. Influence of the morphology and consistency of the indium pillar bumps on the connectivity rate
    Indium bump growth process. (a) Original process; (b) Improved process
    Fig. 8. Indium bump growth process. (a) Original process; (b) Improved process
    Indium bump arrays fabricated via the modified SiNxrecipe: SEM images for 15 μm pitch (a) before and (b) after reflow, and 10 μm pitch (c) before and (d) after reflow; (e) and (f) Statistical diameter distribution of the ball arrays for 15 μm pitch and 10 μm pitch respectively
    Fig. 9. Indium bump arrays fabricated via the modified SiNxrecipe: SEM images for 15 μm pitch (a) before and (b) after reflow, and 10 μm pitch (c) before and (d) after reflow; (e) and (f) Statistical diameter distribution of the ball arrays for 15 μm pitch and 10 μm pitch respectively
    Hybridization of focal plane
    Fig. 10. Hybridization of focal plane
    Response spectra curve of 2560×2048 InGaAs focal plane arrays
    Fig. 11. Response spectra curve of 2560×2048 InGaAs focal plane arrays
    Measured result of response signal of FPAs. (a) Pixel signal map; (b) Signal statistical distribution
    Fig. 12. Measured result of response signal of FPAs. (a) Pixel signal map; (b) Signal statistical distribution
    Measured result of noise of FPAs. (a) Pixel noise map; (b) Noise statistical distribution
    Fig. 13. Measured result of noise of FPAs. (a) Pixel noise map; (b) Noise statistical distribution
    Imaging verification using HDR technology
    Fig. 14. Imaging verification using HDR technology
    Imaging verification of 10 μm pitch 2560×2048 InGaAs focal plane arrays
    Fig. 15. Imaging verification of 10 μm pitch 2560×2048 InGaAs focal plane arrays
    Comparison of the details of visible and short-wave infrared imaging
    Fig. 16. Comparison of the details of visible and short-wave infrared imaging
    10 μm pitch 2560×2048 InGaAs focal plane arrays. (a) Photosensitive chip; (b) Readout circuit; (c) Focal plane
    Fig. 17. 10 μm pitch 2560×2048 InGaAs focal plane arrays. (a) Photosensitive chip; (b) Readout circuit; (c) Focal plane
    ItemValueItemValue
    Black body temperature/K900Black body aperture/in0.1
    Distance/cm60Blackbody radiated power/W1.65×10−11
    Ambient temperature/℃22Ambient humidity23%
    Operating temperature/K276Circuit gain0.8
    Integral time/ms100Integral capacitance/fF15
    Table 1. Test conditions of 2560×2048 InGaAs focal plane arrays
    Chunlei Yu, Haimei Gong, Xue Li, Songlei Huang, Bo Yang, Xianliang Zhu, Xiumei Shao, Tao Li, Yi Gu. 2560×2048 short-wave infrared InGaAs focal plane detector (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20210941
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