• Journal of Infrared and Millimeter Waves
  • Vol. 37, Issue 6, 653 (2018)
HUANG Shu-Shan1、2, YANG Cheng-Ao1、2, ZHANG Yu1、2、*, XIE Sheng-wen1、2, LIAO Yong-Ping1、2, CHAI Xiao-Li1、2, XU Ying-Qiang1、2, and NIU Zhi-Chuan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2018.06.002 Cite this Article
    HUANG Shu-Shan, YANG Cheng-Ao, ZHANG Yu, XIE Sheng-wen, LIAO Yong-Ping, CHAI Xiao-Li, XU Ying-Qiang, NIU Zhi-Chuan. A simple approach to obtain 2.0 μm GaSb laser by using high-order distributed Bragg reflector[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 653 Copy Citation Text show less

    Abstract

    GaSb-based DBR lasers with high-order Bragg gratings are fabricated without complex process. The 16th-order and 24th-order Bragg gratings are fabricated with double-trench ridge waveguide by using standard contact optical lithography respectively. The 16th-order Bragg grating laser achieves single longitudinal mode continuous-wave (CW) operation at room temperature with side mode suppression ratio (SMSR) as high as 17.5 dB. The maximum single mode continuous-wave output power is more than 10 mW at room temperature. The laser shows a very excellent wavelength stability against injection current. The single spatial mode operation is maintained in the entire injection current range. The 24th-order Bragg grating laser even shows a side mode suppression ratio up to 22.5 dB at room temperature. The emission wavelength is around 2.0 μm.
    HUANG Shu-Shan, YANG Cheng-Ao, ZHANG Yu, XIE Sheng-wen, LIAO Yong-Ping, CHAI Xiao-Li, XU Ying-Qiang, NIU Zhi-Chuan. A simple approach to obtain 2.0 μm GaSb laser by using high-order distributed Bragg reflector[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 653
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