• Infrared and Laser Engineering
  • Vol. 50, Issue 10, 20210004 (2021)
Shaohua Wu1,2,3, Pan Huang3, Jingsong Zhao1,2,*, Yuejin Zhao4,*..., Lihe Zheng5 and Rukun Dong3|Show fewer author(s)
Author Affiliations
  • 1School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • 2Kunming Institute of Physics, Kunming 650217, China
  • 3Yunnan KIRO Photonics Co., Ltd., Kunming 650217, China
  • 4School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 5School of Physics and Astronomy, Yunnan University, Kunming 650500, China
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    DOI: 10.3788/IRLA20210004 Cite this Article
    Shaohua Wu, Pan Huang, Jingsong Zhao, Yuejin Zhao, Lihe Zheng, Rukun Dong. TTG-CVD based ZnS material preparation[J]. Infrared and Laser Engineering, 2021, 50(10): 20210004 Copy Citation Text show less
    (a) As-grown TTG-CVD-ZnS bulk and (b) device after coating
    Fig. 1. (a) As-grown TTG-CVD-ZnS bulk and (b) device after coating
    XRD patterns of annealed TTG-CVD-ZnS bulk
    Fig. 2. XRD patterns of annealed TTG-CVD-ZnS bulk
    Surface topography of TTG-CVD-ZnS tested by SEM and traditional CVD-ZnS
    Fig. 3. Surface topography of TTG-CVD-ZnS tested by SEM and traditional CVD-ZnS
    Infrared transmittance of CVD-ZnS
    Fig. 4. Infrared transmittance of CVD-ZnS
    Infrared optical system layout of K1509 IR lens
    Fig. 5. Infrared optical system layout of K1509 IR lens
    MTF of TTG-CVD-ZnS based infrared optical lens
    Fig. 6. MTF of TTG-CVD-ZnS based infrared optical lens
    Aberration raised (a) dispersion spot (unit: mm) and (b) distortion in infrared optical lens
    Fig. 7. Aberration raised (a) dispersion spot (unit: mm) and (b) distortion in infrared optical lens
    (a) TTG-CVD-ZnS based infrared imaging system module; (b) Infrared imaging for different scenes
    Fig. 8. (a) TTG-CVD-ZnS based infrared imaging system module; (b) Infrared imaging for different scenes
    Fabrication conditionParameters
    Raw materials ratioZn (vapor)/ H2S 1.05-1.2
    Deposition temperature/℃Upper Zone660-670
    Middle Zone600-610
    Base Zone630-640
    Ar flow speed/mL·min−1500 (Zn) 300 (H2S)
    Deposition pressure/kPa~4
    Deposition rate/μm·h−1~60
    Deposition time/d~8
    Annealing temperature/℃900-950
    Annealing time/h10-15
    Total Run time/d~9
    Table 1. Deposition conditions for ZnS bulk
    Shaohua Wu, Pan Huang, Jingsong Zhao, Yuejin Zhao, Lihe Zheng, Rukun Dong. TTG-CVD based ZnS material preparation[J]. Infrared and Laser Engineering, 2021, 50(10): 20210004
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