• Journal of Semiconductors
  • Vol. 45, Issue 8, 082502 (2024)
Aleksei Almaev1,2,*, Alexander Tsymbalov1, Bogdan Kushnarev1, Vladimir Nikolaev3,4..., Alexei Pechnikov4, Mikhail Scheglov4 and Andrei Chikiryaka4|Show fewer author(s)
Author Affiliations
  • 1Laboratory of Metal Oxide Semiconductors, Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, Tomsk 634050, Russia
  • 2Fokon LLC, Kaluga 248035, Russia
  • 3Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Moscow 119049, Russia
  • 4Perfect Crystals LLC, Saint Petersburg 194223, Russia
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    DOI: 10.1088/1674-4926/24020001 Cite this Article
    Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka. Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance[J]. Journal of Semiconductors, 2024, 45(8): 082502 Copy Citation Text show less
    References

    [1] X H Chen, F F Ren, S L Gu et al. Review of gallium-oxide-based solar-blind ultraviolet photodetectors. Photonics Res, 7, 381(2019).

    [2] X Yan, Y Sishuo, C Lingyun et al. Research progress of solar-blind UV photodetectors based on amorphous gallium oxide. Opto-Electron Eng, 50, 230005(2023).

    [3] Y Yao, S Okur, L A M Lyle et al. Growth and characterization of α-, β-, and ε-phases of Ga2O3 using MOCVD and HVPE techniques. Mater Res Lett, 6, 268(2018).

    [4] V M Kalygina, A V Almaev, V A Novikov et al. Solar-blind UV detectors based on β-Ga2O3 films. Semiconductors, 54, 682(2020).

    [5] H L He, C Wu, H Z Hu et al. Bandgap engineering and oxygen vacancy defect electroactivity inhibition in highly crystalline N-alloyed Ga2O3 films through plasma-enhanced technology. J Phys Chem Lett, 14, 6444(2023).

    [6] X B Sun, M W Kong, O Alkhazragi et al. Non-line-of-sight methodology for high-speed wireless optical communication in highly turbid water. Opt Commun, 461, 125264(2020).

    [7] X B Sun, Z Y Zhang, A Chaaban et al. 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation. Opt Express, 25, 23267(2017).

    [8] L Guo, Y N Guo, J X Wang et al. Ultraviolet communication technique and its application. J Semicond, 42, 081801(2021).

    [9] L W Sang, M Y Liao, M Sumiya. A comprehensive review of semiconductor ultraviolet photodetectors: From thin film to one-dimensional nanostructures. Sensors, 13, 10482(2013).

    [10] Y Q Li, W Zheng, F Huang. All-silicon photovoltaic detectors with deep ultraviolet selectivity. PhotoniX, 1, 15(2020).

    [11] J H Yuan, C Wu, S L Wang et al. Enhancing plasticity in optoelectronic artificial synapses: A pathway to efficient neuromorphic computing. Appl Phys Lett, 124, 021101(2024).

    [12] X H Hou, Y N Zou, M F Ding et al. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications. J Phys D Appl Phys, 54, 043001(2021).

    [13] X Q Xiu, L Y Zhang, Y W Li et al. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3. J Semicond, 40, 011805(2019).

    [14] S Kim, Y Yoon, D Seo et al. Alpha-phase gallium oxide-based UVC photodetector with high sensitivity and visible blindness. APL Mater, 11, 061107(2023).

    [15] K Shimazoe, H Nishinaka, Y Taniguchi et al. Vertical self-powered ultraviolet photodetector using α-Ga2O3 thin films on corundum structured rh-ITO electrodes. Mater Lett, 341, 134282(2023).

    [16] G Qiao, Q Cai, T C Ma et al. Nanoplasmonically enhanced high-performance metastable phase α-Ga2O3 solar-blind photodetectors. ACS Appl Mater Interfaces, 11, 40283(2019).

    [17] D Y Guo, X L Zhao, Y S Zhi et al. Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin films. Mater Lett, 164, 364(2016).

    [18] Y M Lu, C Li, X H Chen et al. Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition. Chin Phys B, 28, 018504(2019).

    [19] S H Lee, K M Lee, Y B Kim et al. Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition. J Alloys Compd, 780, 400(2019).

    [20] K P Ge, D D Meng, X Chen et al. Solar-blind UV photoelectric properties of pure-phase α-Ga2O3 deposited on m-plane sapphire substrate. Appl Phys A, 129, 78(2023).

    [21] M Yu, C D Lv, J G Yu et al. High-performance photodetector based on sol−gel epitaxially grown α/β Ga2O3 thin films. Mater Today Commun, 25, 101532(2020).

    [22] M Biswas, H Nishinaka. Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications. APL Mater, 10, 060701(2022).

    [23] M Higashiwaki. β-Ga2O3 material properties, growth technologies, and devices: A review. AAPPS Bull, 32, 3(2022).

    [24] Y J Jeong, J H Park, M J Yeom et al. Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy. Appl Phys Express, 15, 074001(2022).

    [25] J Bae, D W Jeon, J H Park et al. High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3. J Vac Sci Technol A Vac Surf Films, 39, 033410(2021).

    [26] A Almaev, V Nikolaev, V Kopyev et al. Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity. IEEE Sens J, 23, 19245(2023).

    [27] C Wu, T L Zhao, H L He et al. Enhanced performance of gallium-based wide bandgap oxide semiconductor heterojunction photodetector for solar-blind optical communication via oxygen vacancy electrical activity modulation. Adv Opt Mater, 12, 2302294(2024).

    [28] C Wu, F M Wu, H Z Hu et al. Review of self-powered solar-blind photodetectors based on Ga2O3. Mater Today Phys, 28, 100883(2022).

    [29] S Park, Y Yoon, H Kim et al. A self-powered high-responsivity, fast-response-speed solar-blind ultraviolet photodetector based on CuO/β-Ga2O3 heterojunction with built-In potential control. Nanomaterials, 13, 954(2023).

    [30] Y Qin, S B Long, H Dong et al. Review of deep ultraviolet photodetector based on gallium oxide. Chin Phys B, 28, 018501(2019).

    [31] X Q Ji, X M Yin, Y Z Yuan et al. Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio. J Alloys Compd, 933, 167735(2023).

    [32] A Almaev, A Tsymbalov, B Kushnarev et al. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3. J Semicond, 45, 042502(2024).

    [33] D Y Guo, H Liu, P G Li et al. Zero-power-consumption solar-blind photodetector based on β-Ga2O3/NSTO heterojunction. ACS Appl Mater Interfaces, 9, 1619(2017).

    [34] S Y Feng, Z T Liu, L Z Feng et al. High-performance self-powered ultraviolet photodetector based on Ga2O3/GaN heterostructure for optical imaging. J Alloys Compd, 945, 169274(2023).

    [35] L J Huang, Z R Hu, X W He et al. Self-powered solar-blind ultraviolet photodetector based on α-Ga2O3 nanorod arrays fabricated by the water bath method. Opt Mater Express, 11, 2089(2021).

    [36] S L Wang, C Wu, F M Wu et al. Flexible, transparent and self-powered deep ultraviolet photodetector based on Ag NWs/amorphous gallium oxide Schottky junction for wearable devices. Sens Actuat A Phys, 330, 112870(2021).

    [37] C Wu, L L Qiu, S Li et al. High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 p−n heterojunction. Mater Today Phys, 17, 100335(2021).

    [38] Y C Wang, C Wu, D Y Guo et al. All-oxide NiO/Ga2O3 p−n junction for self-powered UV photodetector. ACS Appl Electron Mater, 2, 2032(2020).

    [39] P G Li, H Z Shi, K Chen et al. Construction of GaN/Ga2O3 p−n junction for an extremely high responsivity self-powered UV photodetector. J Mater Chem C, 5, 10562(2017).

    [40] T Mei, S Li, S H Zhang et al. Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor. Phys Scr, 97, 015808(2022).

    [41] A Mondal, M K Yadav, S Shringi et al. Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures. Nanotechnology, 31, 294002(2020).

    [42] Y X Li, Z B Zhou, H Pan et al. High-performance Ga2O3/FTO-based self-driven solar-blind UV photodetector with thickness-optimized graphene top electrode. J Mater Res Technol, 22, 2174(2023).

    [43] Y H Wang, S Y Li, J Cao et al. Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias. Mater Des, 221, 110917(2022).

    [44] Y Xu, X H Chen, Y F Zhang et al. Fast speed Ga2O3 solar-blind Schottky photodiodes with large sensitive area. IEEE Electron Device Lett, 41, 997(2020).

    [45] A Polyakov, A Almaev, V Nikolaev et al. Mechanism for long photocurrent time constants in α-Ga2O3 UV photodetectors. ECS J Solid State Sci Technol, 12, 045002.

    [46] B R Tak, R Singh. Ultra-low noise and self-powered β-Ga2O3 deep ultraviolet photodetector array with large linear dynamic range. ACS Appl Electron Mater, 3, 2145(2021).

    [47] E B Yakimov, A Y Polyakov, N B Smirnov et al. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current. J Appl Phys, 123, 185704(2018).

    Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka. Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance[J]. Journal of Semiconductors, 2024, 45(8): 082502
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