[1] C. Francis, M. A. Bradley, P. Boucaud et al.. Intermixing of GaInP/GaAs multiple quantum wells[J]. Appl. Phys. Lett., 1993, 62(2): 178～180
[2] W. Xia, S. A. Pappert, B. Zhu et al.. Ion mixing of Ⅲ-Ⅵ compound semiconductor layered structures[J]. J. Appl. Phys., 1992, 71(6): 2602～2610
[3] Nguyen Hong Ky, J. D. Ganiere, M. Gailhanou et al.. Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1～1) multiple quantum well structures[J]. J. Appl. Phys., 1993, 73(8): 3769～3781
[4] J. Y. Chi, X. Wen, Emil S. Koteles et al.. Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2 capping and rapid thermal annealing[J]. Appl. Phys. Lett., 1989, 55(9): 855～857
[5] J. Genest, J. J. Dubowski, V. Aimez. Suppressed intermixing in InAlGaAs/AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser[J]. Appl. Phys. A, 2007, 89(2): 423～426
[7] Xia Wei, Ma Deying, Wang Ling et al.. High power 650 nm red semiconductor laser with transparent window[J]. Chin. J. Lasers, 2007, 34(9): 1182～1184
[8] Zhao Xing, Fang Zhiliang, Cui Jicheng et al.. Study on the optical engine of the mini-projector[J]. Acta Optica Sinica, 2007, 27(5): 913～918
[9] Kan Ruifeng, Liu Wenqing, Zhang Yujun et al.. Infrared absorption spectrometer of monitoring ambient methane[J]. Acta Optica Sinica, 2006, 26(1): 67～70
[10] Zhong Li, Wang Jun, Feng Xiaoming et al.. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure[J]. Chin. J. Lasers, 2007, 34(8): 1037～1042
[11] U. Gsele, F. Morehead. Diffusion of zinc in gallium arsenide: A new model[J]. J. Appl. Phys., 1981, 52(7): 4617～4619
[12] E. Herbert Li, Bernard L. Weiss, Kwok-Sum Chan. Eigenstates and absorption spectra of interdiffused AlGaAs-GaAs multiple-quantum-well structures[J]. IEEE J. Quant. Electron., 1996, 32(8): 1399～1416
