• Chinese Optics Letters
  • Vol. 13, Issue 10, 101301 (2015)
Xiangjie Zhao1, Yong Zhang1, Cheng Zeng1, Danping Li1, Ge Gao1, Qinzhong Huang1, Yi Wang1, Jinzhong Yu1、2, and Jinsong Xia1、*
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.3788/COL201513.101301 Cite this Article Set citation alerts
    Xiangjie Zhao, Yong Zhang, Cheng Zeng, Danping Li, Ge Gao, Qinzhong Huang, Yi Wang, Jinzhong Yu, Jinsong Xia. Large-mode-volume transverse-electric-polarized distributed feedback cavity on silicon-on-insulator[J]. Chinese Optics Letters, 2015, 13(10): 101301 Copy Citation Text show less

    Abstract

    We demonstrate a large-mode-volume transverse-electric-polarized λ/4 shifted distributed feedback (DFB) cavity on silicon-on-insulator (SOI). A 2.86 mm-long DFB cavity with sidewall corrugation on the ridge is fabricated on a silicon rib waveguide. The cavity structure is designed to enlarge both the longitudinal and transversal mode profiles of the cavity to enclose more luminescent media. Design strategies are verified by both finite difference time domain simulation and experiments. A linewidth of 69 pm and an extinction ratio of 15 dB is obtained, indicating not only the well confinement of the longitudinal mode, but also its well stretching to the cavity ends. The mode volume is 75.39 μm3.
    F=1L(I(z)Iav)2dz(1)

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    Xiangjie Zhao, Yong Zhang, Cheng Zeng, Danping Li, Ge Gao, Qinzhong Huang, Yi Wang, Jinzhong Yu, Jinsong Xia. Large-mode-volume transverse-electric-polarized distributed feedback cavity on silicon-on-insulator[J]. Chinese Optics Letters, 2015, 13(10): 101301
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