Theoretical studies on the doped concentration of broadband erbium-doped tellurite-based optical fiber amplifier

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 2 >Page 261 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 2, 261 (2005)

Theoretical studies on the doped concentration of broadband erbium-doped tellurite-based optical fiber amplifier

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Theoretical studies on the doped concentration of broadband erbium-doped tellurite-based optical fiber amplifier[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 261 Copy Citation Text

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References

[1] Yamada M, Mori A, Kobayashi K, et al. Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76nm [J]. IEEE Photon. Techno. Lett., 1998, 10(9): 1244-1246.

[2] Ohishi Y, Mori A, Yamada M, et al. Gain characteristics of tellurite-based erbium-doped fiber amplifiers for 1.5μm broadband amplification [J]. Opt. Lett., 1998, 23(4): 274-276.

[3] Mori A, Sakamoto T, Kobayashi K, et al. 1.58μm broad-band erbium-doped tellurite fiber amplifier [J]. Journal of Lightwave Technology, 2002, 20(5): 794-799.

[4] Lopez-Barbero A P, Arellano-Espinoza W A, Fregnito H L, et al. Tellurite-based optical fiber amplifier analysis using the finite-element method [J]. Microwave and Optical Technology Letters, 2000, 25(2): 103-107.

[6] Giles C R, Desurvire E. Modeling erbium-doped fiber amplifiers [J]. IEEE Journal of Lightwave Technology,1991, 9(2): 271-283.

[7] Wang J S, Vogel E M, Snitzer E. Tellurite glass:a new candidate for fiber devices [J]. Opt. Matt., 1994, 3: 187-203.

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