• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 1, 7 (2005)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DIFFUSION COEFFICIENT OF As IN HgCdTe EPILAYERS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 7 Copy Citation Text show less
    References

    [1] Wu O K, Kamath G S, Radford W A, et al. Chemical doping of HgCdTe by molecular-beam epitaxy [J]. Journal of Vacuum Science and Technology A, 1990 , 8(2) : 1034-1038.

    [2] He L, Yang J R, Wang S L, et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe [J]. Journal of Crystal Growth 1997,175/176: 677-681.

    [4] Jack Sheng, Larry Wang, Gayle E Lux . SIMS characterization of HgCdTe and related Ⅱ-Ⅵ compounds [J]. Journal of Electronic. Materials . 1996 . 25(8) : 1165-1171.

    [5] Chanda D, Goodwin M W, Chen M C, Variation of arsenic diffusion, coefficients in HgCdTe alloys with temperature and Hg pressure: tuning of p on n double layer heterojunction diode properties [J]. Journal of Electronic. Materials ,1995 , 24(5) : 599-608.

    [6] Bubulac L O, Edwall D D , Viswanathan C R. Dynamics of arsenic diffusion in metalorganic chemical vapor deposited HgCdTe on GaAs/Si substrates [J]. Journal of Vacuum Science and Technology. B , 1991, 9(3):1695-1704.

    [7] Myers T H, Harris K A, Yanka R W, Doped diffusion in HgCdTe grown by photon assisted molecular-beam epitaxy [J] Journal of Vacuum Science and Technology. B, 1992 ,10(10) : 1438-1443.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DIFFUSION COEFFICIENT OF As IN HgCdTe EPILAYERS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 7
    Download Citation