[1] R. W. M. Hoogeveen, A. R. J. van der, A. P. H. Goede. Extended wavelength InGaAs infrared (1.0~2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere[J]. Infrared Phys. & Technol., 2001, 42(1): 1~16
[2] A. Rogalski. Infrared detectors: status and trends[J]. Progress Quantum Electron., 2003, 27(2): 59~210
[3] C. J. Hill, R. Q. Yang. MBE growth optimization of Sb-based interband cascade lasers[J]. J. Crystal Growth, 2005, 278(1): 167~172
[4] A. Harkonen, M. Guina, O. Okhotnikov et al.. 1-W antimonide-based vertical external cavity surface emitting laser operating at 2 μm[J]. Opt. Express, 2006, 14(14): 6479~6484
[5] A. Ducanchez, L. Cerutti, P. Grech et al.. Room temperature continuous wave operation of electrically-injected Sb-based RC-LED emitting near 2.3 μm[J]. Superlattices Microstructure, 2008, 44(1): 62~69
[6] M. G. Mauk, V. M. Andreev. GaSb-related materials for TPV cells[J]. Semiconductor Sci. & Technol., 2003, 18(5): S191~S201
[9] D. R. Liu, K. S. Wu, M. F. Shih et al.. Giant nonlinear optical properties of bismuth thin films grown by pulsed laser deposition[J]. Opt. Lett., 2002, 27(17): 1549~1551
[10] Wei Jinsong, Gan Fuxi. Thermal lens model of Sb thin film in super-resolution near-field structure[J]. Appl. Phys. Lett., 2003, 82(16): 2607~2609
[11] Jiang Laixin, Wu Yiqun, Wang Yang et al.. Low-power super-resolution readout with antimony bismuth alloy film as mask layer[J]. Chin. Phys. Lett., 2009, 26(2): 024214
[12] Gan Fuxi, Wang Yang. Breaking through the optical diffraction limits, developing the nano-optics and photonics[J]. Acta Optica Sinica, 2011, 31(9): 0900104
[13] Fang Rongchuan. Solid State Spectroscopy[M]. Hefei: Press of University of Science and Technology of China, 2001. 35~39
[14] Liu Bo, Ruan Hao, Gan Fuxi. Optical constants of laser-induced crystalline Ge2Sb2Te5 phase-change media[J]. Chinese J. Semiconductors, 2002, 23(5): 479~483
[15] Huang Huan, Zhang Lei, Wang Yang et al.. Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power[J]. J. Alloys and Compounds, 2011, 509(16): 5050~5054