Researching

Journals
  • Advanced Photonics
  • Photonics Insights
  • Advanced Photonics Nexus
  • Photonics Research
  • Advanced Imaging
  • View All Journals
  • Chinese Optics Letters
  • High Power Laser Science and Engineering
    • Articles
  • Optics
  • Physics
  • Geography
  • View All Subjects
    • Conferences
  • CIOP
  • HPLSE
  • AP
  • View All Events
    • News
    About CLP
    Search by keywords or author
    Journals >Journal of Infrared and Millimeter Waves >Volume 43 >Issue 2 >Page 200 > Article
    • Journal of Infrared and Millimeter Waves
    • Vol. 43, Issue 2, 200 (2024)
    High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves
    Jing YUAN1,2, Guan-Jun JING1,2, Jian-Chao WANG1,2, Liu WANG1,2..., Run-Hua GAO1, Yi-Chuan ZHANG1, Yi-Xu YAO1,2, Ke WEI1, Yan-Kui LI1 and Xiao-Juan CHEN1,*|Show fewer author(s)
    Author Affiliations
  • 1High-Frequency High-Voltage Device and Integrated Circuits R&D Center，Institute of Microelectronics of Chinese Academy of Sciences，Beijing 100029，China
  • 2University of Chinese Academy of Sciences，Beijing 100029，China
    • show less
    DOI: 10.11972/j.issn.1001-9014.2024.02.009 Cite this Article
    Jing YUAN, Guan-Jun JING, Jian-Chao WANG, Liu WANG, Run-Hua GAO, Yi-Chuan ZHANG, Yi-Xu YAO, Ke WEI, Yan-Kui LI, Xiao-Juan CHEN. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 200 Copy Citation Text show less
    References

    [1] F Medjdoub, Y Tagro, M Zegaoui et al. Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz. Electron Device Letters, IEEE, 33, 1258-1260(2012).

    [2] X Lu, J Ma, H Jiang et al. Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition. Applied Physics Letters, 105, 287-305(2014).

    [3] Choi Woojin, Renjie Chen, Levy Cooper et al. Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers. Nano letters, 20, 2812-2820(2020).

    [4] Y Yao, Q Jiang, S Huang et al. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy. Japanese Journal of Applied Physics, 119, 233502(2021).

    [5] F Guo, S Huang, X Wang et al. Suppression of interface states between nitride-based gate dielectricss and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. Applied Physics Letters, 118, 093503(2021).

    [6] M. Guidry, B. Romanczyk, H. Li et al. Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs. 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-6(2019).

    [7] P Shrestha, J F Buckwalter, U K Mishra et al. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz. IEEE Electron Device Letters, 1-1(2020).

    [8] M. Guidry, P. Shrestha, Wenjian Liu et al. Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise, 291-294(2022).

    Full Text
    Get PDF
    Figures&Tables (8)
    Equations (0)
    References (8)
    Get Citation
    Copy Citation Text
    Jing YUAN, Guan-Jun JING, Jian-Chao WANG, Liu WANG, Run-Hua GAO, Yi-Chuan ZHANG, Yi-Xu YAO, Ke WEI, Yan-Kui LI, Xiao-Juan CHEN. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 200
    Download Citation
    EndNote(RIS)
    BibTex
    Plain Text
    Tools
    Share
    Save the article for my favorites
    Paper Information
    Recommended Topics
    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology