• Microelectronics
  • Vol. 53, Issue 3, 425 (2023)
GAO Wenjing, ZHANG Wanrong, WANG Xiaoxue, LI Nanxing, REN Yangui, and WU Yinfeng
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220280 Cite this Article
    GAO Wenjing, ZHANG Wanrong, WANG Xiaoxue, LI Nanxing, REN Yangui, WU Yinfeng. A High Linearity Active Inductor with Enhanced Q-f and L-f Characteristics[J]. Microelectronics, 2023, 53(3): 425 Copy Citation Text show less

    Abstract

    A novel high linearity active inductor with enhanced characteristics of quality factor (Q)-frequency (f) and inductance value (L)-frequency (f) was proposed, which is mainly composed of a negative transconductor, a novel positive transconductor, a Q-enhanced modulation module, a feedback resistance, a two-stage level shift circuits and a negative transconductor shunt branch. By the cooperation among the above multiple circuit units and the joint tuning of the constructed three external bias terminal voltages, the active inductor not only had a high Q values and had ability to make the Q values be able to be ajusted independently relative to the inductance values, but also the high Q peaks and inductance values could remain almost unchanged at different frequencies, and at the same time had high linearity. The verification results show that at 6 GHz, the Q value can vary from 275 to 4 471 with the tuning percentage of 1768%, while the inductance value variation is only 15%; at the operating frequencies of 48 GHz, 52 GHz, 56 GHz and 6 GHz, the Q peak values of 4 480, 4 469, 4 473 and 4 471 with a variation of only 024% are obtained, respectively, while the inductance values are 7532 nH, 7467 nH, 7909 nH and 7977 nH with a change of only 63% respectively; the -1 dB compression point of the inductance value is -13 dBV.
    GAO Wenjing, ZHANG Wanrong, WANG Xiaoxue, LI Nanxing, REN Yangui, WU Yinfeng. A High Linearity Active Inductor with Enhanced Q-f and L-f Characteristics[J]. Microelectronics, 2023, 53(3): 425
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