• High Power Laser and Particle Beams
  • Vol. 34, Issue 6, 063004 (2022)
Yan Luo, Lei Ding, Yi Zhao, Chongbin Yao, and Lichun Wang
Author Affiliations
  • Shanghai Aerospace Electronic and Communication Equipment Research Institute, Shanghai 201109, China
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    DOI: 10.11884/HPLPB202234.210360 Cite this Article
    Yan Luo, Lei Ding, Yi Zhao, Chongbin Yao, Lichun Wang. Optimization design and simulation of electric field at interface between substrate and electrode of photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(6): 063004 Copy Citation Text show less
    References

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    [2] Cui H, Yang H, Xu J, et al. Sublinear current-voltage characteristics of linear photoconductive semiconductor switch[J]. IEEE Electr Device L, 1-1(2016).

    [3] Song Chaoyang. Study on semiinsulating 4HSiC PCSS[D]. Xian: Xidian University, 2015: 2030

    [4] Cao P, Huang W, Guo H, et al. Performance of a vertical 4H-SiC photoconductive switch with AZO transparent conductive window and silver mirror reflector[J]. IEEE T Electron Dev, 65, 2047-2051(2018).

    [5] Daniel M, William S, Alan B, et al. High power lateral silicon carbide photoconductive semiconductor switches and investigation of degradation mechanisms[J]. IEEE T Plasma Sci, 43, 2021-2031(2015).

    [6] Sampayan S, Bora M, Brooksby C, et al. High voltage wide bandgap photoconductive switching[J]. Mater Sci Forum, 821-823, 871-874(2015).

    [7] Suproniuk M, Kaminski P, Pawlowski M, et al. Current status of modelling the semi-insulating 4H-SiC transient photoconductivity for application to photoconductive switches[J]. Opto-Electron. Rev, 25, 171-180(2017).

    [8] Dong Yan. Research on high power photoconductive semiconduct switch[D]. Chengdu: University of Electronic Science Technology, 2018: 1030.

    [9] Majda E, Suproniuk M, Pawlowski M, et al. Current state of photoconductive semiconductor switch engineering[J]. Opto-Electron Rev, 26, 92-102(2018).

    [11] Hettler C, James C, Dickens J. High electric field packaging of silicon carbide photoconductive switches[C]Proc of PPC. 2009.

    [12] Fessler C, Kelkar K, Nunnally W, et al. Investigation of high electric fields at the electrodeSiC interface in photoswitches[C]Proc of PPC. 2008.

    [13] Cao Penghui. Research on vertical 4HSiC PCSS with transparent electrode[D]. Xian: Xidian University, 2017: 2040

    [14] Sullivan J. High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch[J]. Appl Phys Lett, 104, 172106(2014).

    [16] James C, Hettler C, Dickens J. Highpurity semiinsulating 4HSiC as a highvoltage switch material[C]Proc of IPMC. 2010.

    [17] Dong Yan. Research on high power photoconductive semiconduct switch[D]. Chengdu: University of Electronic Science Technology of China, 2018: 111

    [18] Liu Jinjin. Design simulation of silicon carbide photoconductive semiconduct switches withsting high voltage[D]. Shanghai: Shanghai Nmal University, 2021: 612

    CLP Journals

    [1] Xu Chu, Langning Wang, Xiaoqing Zhu, Ripin Wang, Bin Wang, Tao Xun, Jinliang Liu. Research on tunable pulse generation with MHz repetition rate based on compensated 4H-SiC photoconductive semiconductor[J]. High Power Laser and Particle Beams, 2022, 34(7): 075006

    Yan Luo, Lei Ding, Yi Zhao, Chongbin Yao, Lichun Wang. Optimization design and simulation of electric field at interface between substrate and electrode of photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(6): 063004
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