IN-SITU DEPOSITION OF PZT FERROELECTRIC THIN FILMS AT LOW TEMPERATURE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 27 >Issue 3 >Page 224 > Article

Journal of Infrared and Millimeter Waves
Vol. 27, Issue 3, 224 (2008)

IN-SITU DEPOSITION OF PZT FERROELECTRIC THIN FILMS AT LOW TEMPERATURE

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. IN-SITU DEPOSITION OF PZT FERROELECTRIC THIN FILMS AT LOW TEMPERATURE[J]. Journal of Infrared and Millimeter Waves, 2008, 27(3): 224 Copy Citation Text

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References

[1] WANG Qing-Ming,DING Yong-Ping,CHEN Qing-Ming,et al.Crystalline orientation dependence of nanomechanical properties of Pb (Zr0.52Ti0.48)O3 thin films[J].Appl.Phys.Lett.,2005,86 (16):162903

[2] Hong J G,Song H W,Lee HC,et al.Structure and electrical properties of Pb (ZrxTil-x)O3 deposited on textured Pt films[J].J.Appl.Phys.,2001,90 (4):1962.

[6] Mark D Losegoal,Leslie H Jimison,Jon F Ihlefeld,et al.Ferroelectric response from lead zirconate titanate thin films prepareddirectly on low-resistivity copper substrates[J].Applied Physics Letters,2005,86:1729016.

[7] Goux L,Gervais M,Catherinot A,et al.Crystalline and electrical properties of pulsed laser deposited BST on platinized silicon substrates[J],Journal of Non-Crystalline Solids,2002,303:194-200.

[8] Jain M,Majumder S B,Katiyar R S,et al.Structural and dielectric properties of heterostructured BST thin films by sol-gel technique[J].Thin Solid Films,2004,447-448:537-541.

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