[1] Achard J, Issaoui R, Tallaire A, et al. Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices[J]. Physica Status Solidi(a), 2012, 209(9): 1651-1658.

[2] Gong Hui, Fan Zhengxiu, Jiang Xin, et al. Synthesis of uniform and large area nano-diamond film[J]. Acta Optica Sinica, 2002, 22(6): 718-722.

[3] Chow T P, Tyagi R. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices[J]. IEEE Transactions on Electron Devices, 1994, 41(8): 1481-1483.

[4] Alvarez J, Houzé F, Kleider J P, et al. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy[J]. Superlattices & Microstructures, 2006, 40(4-6): 343-349.

[5] Wang Lijun, Wang Zi, Zhu Yuchuan, et al. Blue electroluminescence from Ce3+ ion implant doped diamond thin films[J]. Acta Optica Sinica, 2011, 31(3): 0331001.

[6] Li Hongdong, Zou Guangtian, Wang Qiliang, et al. High-rate growth and nitrogen distribution in homoepitaxial chemical vapor deposited single crystal diamond[J]. Chinese Physics Letters, 2008, 25(5): 1803-1806.

[7] Koné S, Civrac G, Schneider H, et al. CVD diamond Schottky barrier diode, carrying out and characterization[J]. Diamond & Related Materials, 2010, 19(7-9): 792-795.

[8] Blank V D, Bormashov V S, Tarelkin S A, et al. Power high-voltage and fast response Schottky barrier diamond diodes[J]. Diamond & Related Materials, 2015, 57: 32-36.

[9] Zhou Yi, Wang Aiying. Determination of optical constants and thickness of diamond-like carbon films by a multiple sample method[J]. Acta Optica Sinica, 2010, 30(8): 2468-2472.

[10] Faggio G, Messina G, Santangelo S, et al. Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors[J]. Journal of Quantitative Spectroscopy & Radiative Transfer, 2012, 113(18): 2476-2481.

[11] Muret P, Volpe P N, Tran-Thi T N, et al. Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers[J]. Diamond & Related Materials, 2011, 20(3): 285-289.

[12] Schroder D K. Semiconductor material and device characterization[M]. New York: John Wiley & Sons, 1990.

[13] Cheung S K, Cheung N W. Extraction of Schottky diode parameters from forward current-voltage characteristics[J]. Applied Physics Letters, 1986, 49(2): 85-87.

[14] Nawawi A, Tseng K J, Rusli, et al. Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model[J]. Diamond & Related Materials, 2013, 35: 1-6.