[1] R. Nagarajan, M. Filer, Y. Fu, M. Kato, T. Rope, J. Stewart. Silicon photonics-based 100 Gbit/s, PAM4, DWDM data center interconnects. J. Opt. Commun. Netw., 10, B25-B36(2018).
[2] Y. Shen, X. Meng, Q. Cheng, S. Rumley, N. Abrams, A. Gazman, E. Manzhosov, M. S. Glick, K. Bergman. Silicon photonics for extreme scale systems. J. Lightwave Technol., 37, 245-259(2019).
[3] K. Vandoorne, P. Mechet, T. Van Vaerenbergh, M. Fiers, G. Morthier, D. Verstraeten, B. Schrauwen, J. Dambre, P. Bienstman. Experimental demonstration of reservoir computing on a silicon photonics chip. Nat. Commun., 5, 3541(2014).
[4] C. Rogers, A. Y. Piggott, D. J. Thomson, R. F. Wiser, I. E. Opris, S. A. Fortune, A. J. Compston, A. Gondarenko, F. Meng, X. Chen, G. T. Reed, R. Nicolaescu. A universal 3D imaging sensor on a silicon photonics platform. Nature, 590, 256-261(2021).
[5] M. Jutzi, M. Berroth, G. Wohl, M. Oehme, E. Kasper. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photon. Technol. Lett., 17, 1510-1512(2005).
[6] L. Virot, L. Vivien, J.-M. Fédéli, Y. Bogumilowicz, J.-M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, E. Cassan. High-performance waveguide-integrated germanium pin photodiodes for optical communication applications. Photon. Res., 1, 140-147(2013).
[7] Z. Huang, C. Li, D. Liang, K. Yu, C. Santori, M. Fiorentino, W. Sorin, S. Palermo, R. G. Beausoleil. 25 Gbps low-voltage waveguide Si–Ge avalanche photodiode. Optica, 3, 793-798(2016).
[8] B. Wang, Z. Huang, Y. Yuan, D. Liang, X. Zeng, M. Fiorentino, R. G. Beausoleil. 64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors. Photon. Res., 8, 1118-1123(2020).
[9] J. Zhang, B. P.-P. Kuo, S. Radic. 64 Gb/s PAM4 and 160 Gb/s 16QAM modulation reception using a low-voltage Si-Ge waveguide-integrated APD. Opt. Express, 28, 23266-23273(2020).
[10] B. Shi, F. Qi, P. Cai, X. Chen, Z. He, Y. Duan, G. Hou, T. Su, S. Li, W. Chen, C. Hong, R.-C. Yu, D. Pan. 106 Gb/s normal-incidence Ge/Si avalanche photodiode with high sensitivity. Optical Fiber Communications Conference and Exhibition (OFC), 1-3(2020).
[11] Y. Yuan, Z. Huang, X. Zeng, D. Liang, W. V. Sorin, M. Fiorentino, R. Beausoleil. High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector. IEEE J. Sel. Top. Quantum Electron., 28, 3800508(2021).
[12] K. Sun, J. Gao, D. Jung, J. Bowers, A. Beling. 40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy. Opt. Lett., 45, 2954-2956(2020).
[13] Y. Yuan, D. Jung, K. Sun, J. Zheng, A. H. Jones, J. E. Bowers, J. C. Campbell. III-V on silicon avalanche photodiodes by heteroepitaxy. Opt. Lett., 44, 3538-3541(2019).
[14] E. Onaran, M. C. Onbasli, A. Yesilyurt, H. Y. Yu, A. M. Nayfeh, A. K. Okyay. Silicon-germanium multi-quantum well photodetectors in the near infrared. Opt. Express, 20, 7608-7615(2012).
[15] H. Kim, S.-Y. Ahn, Z. Wasilewski. Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate. J. Vac. Sci. Technol. B, 37, 031209(2019).
[16] J. Huang, Y. Wan, D. Jung, J. Norman, C. Shang, Q. Li, K. M. Lau, A. C. Gossard, J. E. Bowers, B. Chen. Defect characterization of InAs/InGaAs quantum dot pin photodetector grown on GaAs-on-V-grooved-Si substrate. ACS Photon., 6, 1100-1105(2019).
[17] B. Tossoun, G. Kurczveil, C. Zhang, A. Descos, Z. Huang, A. Beling, J. C. Campbell, D. Liang, R. G. Beausoleil. Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon. Optica, 6, 1277-1281(2019).
[18] B. Chen, Y. Wan, Z. Xie, J. Huang, N. Zhang, C. Shang, J. Norman, Q. Li, Y. Tong, K. M. Lau, A. C. Gossard, J. E. Bowers. Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si. ACS Photon., 7, 528-533(2020).
[19] S. Marconi, M. Giambra, A. Montanaro, V. Mišeikis, S. Soresi, S. Tirelli, P. Galli, F. Buchali, W. Templ, C. Coletti, V. Sorianello, M. Romagnoli. Photo thermal effect graphene detector featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 direct detection. Nat. Commun., 12, 806(2021).
[20] C. Liu, J. Guo, L. Yu, J. Li, M. Zhang, H. Li, Y. Shi, D. Dai. Silicon/2D-material photodetectors: from near-infrared to mid-infrared. Light Sci. Appl., 10, 123(2021).
[21] J. Doylend, P. Jessop, A. Knights. Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection. Opt. Express, 18, 14671-14678(2010).
[22] J. P. Mailoa, A. J. Akey, C. B. Simmons, D. Hutchinson, J. Mathews, J. T. Sullivan, D. Recht, M. T. Winkler, J. S. Williams, J. M. Warrender, P. D. Persans, M. J. Aziz, T. Buonassisi. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nat. Commun., 5, 3011(2014).
[23] R. Shafiiha, D. Zheng, S. Liao, P. Dong, H. Liang, N. Feng, B. Luff, D. Feng, G. Li, J. Cunningham, K. Raj, A. V. Krishnamoorthy, M. Asghari. Silicon waveguide coupled resonator infrared detector. Optical Fiber Communication Conference, OMI8(2010).
[24] J. J. Ackert, M. Fiorentino, D. F. Logan, R. Beausoleil, P. E. Jessop, A. P. Knights. Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth. J. Nanophoton., 5, 059507(2011).
[25] A. P. Knights, J. J. Ackert. High-speed resonant detection via defect states in silicon disk resonators. Proc. SPIE, 9752, 97520P(2016).
[26] Y. Li, S. Feng, Y. Zhang, A. W. Poon. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators. Opt. Lett., 38, 5200-5203(2013).
[27] H. Zhu, L. Zhou, X. Sun, Y. Zhou, X. Li, J. Chen. On-chip optical power monitor using periodically interleaved PN junctions integrated on a silicon waveguide. IEEE J. Sel. Top. Quantum Electron., 20, 56-63(2014).
[28] M. W. Knight, H. Sobhani, P. Nordlander, N. J. Halas. Photodetection with active optical antennas. Science, 332, 702-704(2011).
[29] J.-B. You, H. Kwon, J. Kim, H.-H. Park, K. Yu. Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides. Opt. Express, 25, 4284-4297(2017).
[30] H. Zhu, K. Goi, K. Ogawa. All-silicon waveguide photodetection for low-bias power monitoring and 20-km 28-Gb/s NRZ-OOK signal transmission. IEEE J. Sel. Top. Quantum Electron., 24, 4400207(2017).
[31] M. Dinu, F. Quochi, H. Garcia. Third-order nonlinearities in silicon at telecom wavelengths. Appl. Phys. Lett., 82, 2954-2956(2003).
[32] X. Li, Z. Li, X. Xiao, H. Xu, J. Yu, Y. Yu. 40 Gb/s all-silicon photodetector based on microring resonators. IEEE Photon. Technol. Lett., 27, 729-732(2015).
[33] M. Sakib, P. Liao, R. Kumar, D. Huang, G.-L. Su, C. Ma, H. Rong. A 112 Gb/s all-silicon micro-ring photodetector for datacom applications. Optical Fiber Communication Conference, Th4A-2(2020).
[34] Y. Yuan, W. V. Sorin, D. Liang, S. Cheung, Y. Peng, M. Jain, Z. Huang, M. Fiorentino, R. G. Beausoleil. Development and modeling of Ge-free microring avalanche photodiode in optical communication band. Optical Fiber Communication Conference, W3D-4(2022).
[35] S. Dwivedi, J. Kjellman, T. David, M. Prost, O. Syshchyk, E. Van Sieleghem, J. Lee, A. Marinins, P. Soussan, M. Dahlem, X. Rottenberg, R. Jansen. All-silicon photodetectors for photonic integrated circuit calibration. IEEE Photon. Technol. Lett., 33, 836-839(2021).
[36] Y. Ren, V. Van. Ultrawide-band silicon microring avalanche photodiode with linear photocurrent-wavelength response. Photon. Res., 9, 2303-2308(2021).
[37] Y. Yuan, W. V. Sorin, S. Cheung, Y. Peng, D. Liang, Z. Huang, M. Fiorentino, R. Beausoleil. A 4×100 Gb/s DWDM optical link with all-silicon microring transmitters and receivers. Asia Communications and Photonics Conference, T2D.4(2021).
[38] Y. Yuan, W. V. Sorin, Z. Huang, X. Zeng, D. Liang, A. Kumar, S. Palermo, M. Fiorentino, R. G. Beausoleil. A 100 Gb/s PAM4 two-segment silicon microring resonator modulator using a standard foundry process. ACS Photon., 9, 1165-1171(2022).
[39] V. Van. Optical Microring Resonators: Theory, Techniques, and Applications(2016).
[40] S. S. Li. Semiconductor Physical Electronics(2012).
[41] M.-J. Lee, H. Rücker, W.-Y. Choi. Optical-power dependence of gain, noise, and bandwidth characteristics for 850-nm CMOS silicon avalanche photodetectors. IEEE J. Sel. Top. Quantum Electron., 20, 211-217(2014).
[42] A. D. Bristow, N. Rotenberg, H. M. Van Driel. Two-photon absorption and Kerr coefficients of silicon for 850–2200 nm. Appl. Phys. Lett., 90, 191104(2007).
[43] X. Sang, E.-K. Tien, O. Boyraz. Applications of two photon absorption in silicon. J. Optoelectron. Adv. Mater., 11, 15-25(2009).
[44] C. Tan, J. Clark, J. David, G. Rees, S. Plimmer, R. Tozer, D. Herbert, D. Robbins, W. Leong, J. Newey. Avalanche noise measurement in thin Si p+-i-n+ diodes. Appl. Phys. Lett., 76, 3926-3928(2000).
[45] M. A. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holmes, J. C. Campbell, B. E. Saleh, M. C. Teich. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes. IEEE Trans. Electron Devices, 48, 2722-2731(2001).
[46] Y. Peng, W. V. Sorin, S. Cheung, Y. Yuan, Z. Huang, M. Fiorentino, R. G. Beausoleil. Small-signal analysis of all-Si microring resonator photodiode. Electronics, 11, 183(2022).
[47] N. Mehta, C. Sun, M. Wade, V. Stojanović. A differential optical receiver with monolithic split-microring photodetector. IEEE J. Solid-State Circuits, 54, 2230-2242(2019).
[48] D. Liang, S. Srinivasan, G. Kurczveil, B. Tossoun, S. Cheung, Y. Yuan, A. Descos, Y. Hu, Z. Huang, P. Sun, C. Zhang, X. Zeng, S. Liu, J. E. Bowers, M. Fiorentino, R. G. Beausoleil. An energy-efficient and bandwidth-scalable DWDM heterogeneous silicon photonics integration platform. IEEE J. Sel. Top. Quantum Electron., 28, 6100819(2022).