[1] He T J, Jing H Q, Zhu L N et al. Quantum well intermixing of 915 nm InGaAsP/GaAsP primary epitaxial wafers[J]. Acta Optica Sinica, 42, 0114003(2022).
[2] Wang Y X, Zhu L N, Zhong L et al. Influence of SixNy deposition parameters on intermixing of quantum wells[J]. Acta Optica Sinica, 42, 1031003(2022).
[3] Li Y, Yuan W F, Li K et al. InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range[J]. Chinese Optics Letters, 20, 022503(2022).
[4] Cui X Y, Lin F Y, Zhang Z H et al. Simulation analysis of low-noise InGaAs/InP avalanche photodiodes[J]. Chinese Journal of Lasers, 48, 1701001(2021).
[5] Wu J, Wang Y H, Tai H X et al. Low-dimensional indium-based well-dot composite quantum structures and their optical properties and application prospects[J]. Chinese Journal of Lasers, 49, 1901002(2022).
[6] Luo Y, Hao Y Q, Zou Y G. Design and fabrication of GaAs/AlOx high-index-contrast sub-wavelength grating reflector for VCSEL[J]. Acta Optica Sinica, 43, 0105002(2023).
[7] Rong M M, Zhang Y J, Li S M et al. InGaAs surface cleaning based on scanning focused XPS technique[J]. Acta Optica Sinica, 41, 0516004(2021).
[8] Schlenker D, Miyamoto T, Chen Z et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J]. Journal of Crystal Growth, 209, 27-36(2000).
[9] Ma S J, Wang Y, Sodabanlu H et al. Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs[J]. Journal of Crystal Growth, 352, 245-248(2012).
[10] Muraki K, Fukatsu S, Shiraki Y et al. Surface segregation of in atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells[J]. Applied Physics Letters, 61, 557-559(1992).
[11] Yu Q N, Li X, Jia Y et al. InGaAs-based well–island composite quantum-confined structure with superwide and uniform gain distribution for great enhancement of semiconductor laser performance[J]. ACS Photonics, 5, 4896-4902(2018).
[12] Yu Q N, Zheng M, Tai H X et al. Quantum confined indium-rich cluster lasers with polarized dual-wavelength output[J]. ACS Photonics, 6, 1990-1995(2019).
[13] Zheng M, Yu Q N, Tai H X et al. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 18, 051403(2020).
[14] Duan L H, Fang L, Zhang J et al. Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm[J]. Semiconductor Science and Technology, 29, 055004(2014).
[15] Jung A, Taboada A G, Stumpf W et al. Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates[J]. Journal of Applied Physics, 118, 075701(2015).
[16] Yu H P, Roberts C, Murray R. Influence of indium segregation on the emission from InGaAs/GaAs quantum wells[J]. Applied Physics Letters, 66, 2253-2255(1995).
[17] Wang J, Ren X M, Deng C et al. Extremely low-threshold current density InGaAs/AlGaAs quantum-well lasers on silicon[J]. Journal of Lightwave Technology, 33, 3163-3169(2015).
[18] Denteneer P J, de Walle C G V, Pantelides S T. Microscopic structure of the hydrogen-boron complex in crystalline silicon[J]. Physical Review B, 39, 10809-10824(1989).
[19] Ma M L, Wu J, Yang M et al. Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets[J]. Acta Physica Sinica, 62, 174209(2013).
[20] Kong Y T, Ma R, Shen B et al. Experimental detection on thickness fluctuation of InxGa1-xAs-based indium-rich cluster structure[J]. IEEE Photonics Journal, 14, 5858004(2022).
[21] Matthews J W, Blakeslee A E. Defects in epitaxial multilayers I. misfit dislocations[J]. Journal of Crystal Growth, 27, 118-125(1974).
[22] Zhao T L, Wang Y D, Jia J et al. Application of semiconductor lasers[C], 234(2009).