Peng Fu, Yanchun Zhang, Tao Zhao, Yongming Zhao, Song Tang, Ying Li, Shendan Han. Design and Fabrication of High‑Efficiency and High‑Power 976 nm Semiconductor Laser Chips[J]. Chinese Journal of Lasers, 2024, 51(7): 0701017
- Chinese Journal of Lasers
- Vol. 51, Issue 7, 0701017 (2024)
Fig. 1. Calculation and simulation results of refractive index and light field distribution of epitaxial structure
Fig. 2. Calculated vertical far-field distribution
Fig. 3. Influence of reflectivity of anti-reflection film on laser performance parameters at different chip cavity lengths. (a) PCE; (b) threshold current; (c) slope efficiency
Fig. 4. Measured optical power and PCE versus operating current for COS before optimization
Fig. 5. Measured optical power and PCE versus operating current for COS after optimization
Fig. 6. Power and voltage of device versus current before and after optimization
Fig. 7. Measured far-field distributions of COS when operating current is 23 A
Fig. 8. Energy ratios under different slow-axis far-field divergence angles at 23 A current
Fig. 9. Measured spectrum at 23 A current
Fig. 10. Power record curves in accelerated lifetime test
|
Table 1. Main material parameters of 976 nm epitaxial wafer
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20