FERROELECTRIC FILM THICKNESS DEPENDENCE OF PROPERTIES OF INFRARED DETECTOR WITH AN SiO2 AEROGEL THERMAL INSULATION LAYER

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 26 >Issue 5 >Page 329 > Article

Journal of Infrared and Millimeter Waves
Vol. 26, Issue 5, 329 (2007)

FERROELECTRIC FILM THICKNESS DEPENDENCE OF PROPERTIES OF INFRARED DETECTOR WITH AN SiO2 AEROGEL THERMAL INSULATION LAYER

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. FERROELECTRIC FILM THICKNESS DEPENDENCE OF PROPERTIES OF INFRARED DETECTOR WITH AN SiO2 AEROGEL THERMAL INSULATION LAYER[J]. Journal of Infrared and Millimeter Waves, 2007, 26(5): 329 Copy Citation Text

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References

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[3] Hanson C M,Beratan H R,Belcher J F.Uncooled infrared imaging using thin film ferroelectrics[J],Proceedings of SPIE,2001,4288:298-303.

[4] Paul Muralt.Micromachined infrared detectors based on pyroelectric thin films[J].Rep.Prog.Phys.2001,64:1339-1388.

[9] Ruffner J A,Bullington J A,Clem P G,et al.Uncooled thin film pyroelectrical IR detector with aerogel thermal isolation[P],US patent,No.5949071,Sep.7,1999.

[10] Lü X,Chu J H.Phonon heat transport in silicon nanowires[J],Eur.Phys.J.,2002,B26:375-378.

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