Researching | Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

Journals >Acta Physica Sinica >Volume 68 >Issue 17 >Page 178501-1 > Article

Acta Physica Sinica
Vol. 68, Issue 17, 178501-1 (2019)

Improved performance of Al/n⁺Ge Ohmic contact andGe n⁺/p diode by two-step annealing method

Chen Wang^1、*, Yi-Hong Xu², Cheng Li³, Hai-Jun Lin¹, and Ming-Jie Zhao¹

Author Affiliations

¹Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opti-electronic andCommunication Engineering, Xiamen University of Technology, Xiamen 361024, China

²Department of Electric and Information Engineering, Xiamen Institute of Technology, Xiamen 361024, China

³Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

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DOI: 10.7498/aps.68.20190699 Cite this Article

Chen Wang, Yi-Hong Xu, Cheng Li, Hai-Jun Lin, Ming-Jie Zhao. Improved performance of Al/n⁺Ge Ohmic contact andGe n⁺/p diode by two-step annealing method [J]. Acta Physica Sinica, 2019, 68(17): 178501-1 Copy Citation Text

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References

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Chen Wang, Yi-Hong Xu, Cheng Li, Hai-Jun Lin, Ming-Jie Zhao. Improved performance of Al/n⁺Ge Ohmic contact andGe n⁺/p diode by two-step annealing method [J]. Acta Physica Sinica, 2019, 68(17): 178501-1

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