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    Journals >Acta Physica Sinica >Volume 68 >Issue 17 >Page 178501-1 > Article
    • Acta Physica Sinica
    • Vol. 68, Issue 17, 178501-1 (2019)
    Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method
    Chen Wang1、*, Yi-Hong Xu2, Cheng Li3, Hai-Jun Lin1, and Ming-Jie Zhao1
    Author Affiliations
  • 1Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opti-electronic andCommunication Engineering, Xiamen University of Technology, Xiamen 361024, China
  • 2Department of Electric and Information Engineering, Xiamen Institute of Technology, Xiamen 361024, China
  • 3Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
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    DOI: 10.7498/aps.68.20190699 Cite this Article
    Chen Wang, Yi-Hong Xu, Cheng Li, Hai-Jun Lin, Ming-Jie Zhao. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method [J]. Acta Physica Sinica, 2019, 68(17): 178501-1 Copy Citation Text show less
    Process flow used for the fabrication of Ge n+/p junction diodes.Ge n+/p结二极管制备工艺流程图
    Fig. 1. Process flow used for the fabrication of Ge n+/p junction diodes. Ge n+/p结二极管制备工艺流程图
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    Room temperature I-V characteristics of Ge n+/p junction diode formed by ELA with one pulse at 150 mJ/cm2 with different pre-annealing conditions.150 mJ/cm2激光能量密度不同预退火条件下p-n结二极管的I-V特性曲线
    Fig. 2. Room temperature I-V characteristics of Ge n+/p junction diode formed by ELA with one pulse at 150 mJ/cm2 with different pre-annealing conditions. 150 mJ/cm2激光能量密度不同预退火条件下p-n结二极管的I-V特性曲线
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    Change of specific contact resistivity of Al/n+-Ge extracted by CTLM with different annealing conditions. The inset shows the CTLM schematic structure (top view).Al/n+-Ge接触的比接触电阻率随不同退火条件的变化曲线, 内插图是CTLM结构的俯视图
    Fig. 3. Change of specific contact resistivity of Al/n+-Ge extracted by CTLM with different annealing conditions. The inset shows the CTLM schematic structure (top view). Al/n+-Ge接触的比接触电阻率随不同退火条件的变化曲线, 内插图是CTLM结构的俯视图
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    (a) Room temperature I-V characteristics of Ge n+/p junction diode; (b) rectification ratio of Ge n+/p junction diodes formed by ELA with or without pre-annealing at 400 ℃-10 min.(a) 不同退火条件下Ge n+/p结二极管的I-V特性曲线; (b) Ge n+/p结二极管的整流比随退火条件变化曲线
    Fig. 4. (a) Room temperature I-V characteristics of Ge n+/p junction diode; (b) rectification ratio of Ge n+/p junction diodes formed by ELA with or without pre-annealing at 400 ℃-10 min. (a) 不同退火条件下Ge n+/p结二极管的I-V特性曲线; (b) Ge n+/p结二极管的整流比随退火条件变化曲线
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    样品编号退火条件整流比(@ ± 1 V)理想因子
    R1350 ℃-10 min&150 mJ/cm22 × 1051.11
    R2400 ℃-10 min&150 mJ/cm28.35 × 1061.08
    R3400 ℃-30 min&150 mJ/cm21.12 × 102> 2
    R4450 ℃-10 min&150 mJ/cm213> 2
    Table 1. Rectification ratio and ideality factor of Ge n+/p junction diodes under different annealing conditions.
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    Chen Wang, Yi-Hong Xu, Cheng Li, Hai-Jun Lin, Ming-Jie Zhao. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method [J]. Acta Physica Sinica, 2019, 68(17): 178501-1
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