[1] Orlando M. Cabarcos, David L. Allara, Mark W. Horn et al.. Correlation of temperature response and structure of annealed VOx thin films for IR detector applications[J]. J. Vac. Sci. Technol. A, 2009, 27(4): 956~961
[2] Li Huagao, Yang Ziwen, Liu Shuang. Preparation of VOx films for uncooled infrared detectors[J]. Semiconductor Optoelectronics, 2001, 22(1): 38\~40
[3] Geert Silversmit, Diederik Depla, Hilde Poelman et al.. Determination of the V2p XPS biding energies for different vanadium oxidation states (Vs+ to Vo+)[J]. J. Electron Spectrosc., 2004, 135(2-3): 167~175
[4] Xu Zhenjia. Semiconductor Detecting and Analyzing[M]. Beijing: Science Press, 2007. 376~381
[5] Liu Enke, Zhu Binsheng, Luo Jinsheng. Semiconductor Physics[M]. Beijing: Pulishing House of Electronics Industry, 2009. 109~110
[6] Wang Lei, Du Jun, Mao Changhui et al.. Influence of heat treatment on the gas sensitivity of SnOx thin film[J]. Journal of Materials Science & Engineering, 2006, 24(102): 511~513
[7] Xu Min, Cui Jingzhong, He Deyan. Study of structure and properties of VO2 thin film for uncooled IR focal plane array[J], Micro-Fabrication Technology, 2003, (1): 34~39
[8] Lu Yong, Lin Libin, Zou Ping et al.. Optical and electrical properties of VO2 thin films affected by valence and structure[J]. Journal of Synthetic Crystals, 2001, 30(2): 185~191
[10] Jiang Chaolun, Tao Mingde. Dependence of grain boundary on conductivity of polycrystalline oxide semiconductor[J]. Electronic Component and Materials, 2003, (6): 11~13