Fig. 1. Schematic diagram of the device preparation process. (a) Pretreated zinc wire; (b) Preparation of the ZnO electron transport layer by dip coating and annealing; (c) Dip-coating the photosensitive layer and annealing; (d) Dip-coating the hole transport layer and annealing; (e) Winding the external electrode; (f) Schematic diagram of the twist equipment

Fig. 2. Molecular structures of (a) PBDB-T and (b) ITIC-Th; (c) Normalized absorption spectra of PBDB-T and ITIC-Th; (d) Energy level alignment of the device materials; (e) Cross-sectional SEM image of the device

Fig. 3. (a) Optical photos and (b, c) SEM images of the Ag-FOPD; (d) Optical photos and (e, f) SEM images of the CNT-FOPD

Fig. 4. Spectral response characteristics of FOPDs. (a) J-V characteristics; (b) R; (c) EQE; (d) D*

Fig. 5. Response time of (a) Ag-FOPD and (d) CNT-FOPD; Omnidirectional performance of (b) Ag-FOPD and (e) CNT-FOPD; (c, f) Response of Ag-FOPD and CNT-FOPD under different light intensity