ELECTRICALLY ACTIVE DEFECTS IN HgCdTe AND OPTO-ELECTRONIC PROPER-TIES OF FOCAL PLANE ARRAY BY LASER BEAM INDUCED CURRENT

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 4 >Page 259 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 4, 259 (2001)

ELECTRICALLY ACTIVE DEFECTS IN HgCdTe AND OPTO-ELECTRONIC PROPER-TIES OF FOCAL PLANE ARRAY BY LASER BEAM INDUCED CURRENT

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. ELECTRICALLY ACTIVE DEFECTS IN HgCdTe AND OPTO-ELECTRONIC PROPER-TIES OF FOCAL PLANE ARRAY BY LASER BEAM INDUCED CURRENT[J]. Journal of Infrared and Millimeter Waves, 2001, 20(4): 259 Copy Citation Text

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References

[2] Joseph J Kopanski, Jeremiah R Lowney, Donaid B Novotny , et al. High-spatial resolution resistivity mapping applied to mercury cadmium telluride. J.Vac.Sci.Technol.,1992,B10(4): 1553

[3] Baja J, Bubulac L O, Newman P R,et al. Spatial mapping of electrically active defects in HgCdTe using laser beam induced current. J.Vac.Technol.,1992,A5(5): 3186

[4] Wallmark J T. A new semiconductor photocell using lateral photoeffect. Proc. IRE.,1957, 45:474

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