• Journal of Semiconductors
  • Vol. 46, Issue 2, 022403 (2025)
Xiangrong Pu1, Fan Shu2, Qifan Wang1, Gang Liu2,*, and Zhang Zhang1,**
Author Affiliations
  • 1School of Microelectronics, Hefei University of Technology, Hefei 230009, China
  • 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
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    DOI: 10.1088/1674-4926/24080018 Cite this Article
    Xiangrong Pu, Fan Shu, Qifan Wang, Gang Liu, Zhang Zhang. Visual synapse based on reconfigurable organic photovoltaic cell[J]. Journal of Semiconductors, 2025, 46(2): 022403 Copy Citation Text show less
    (Color online) The device schematic and electrical properties of Au/PM6 : Y6/ITO. (a) Schematic diagram of device structure and local magnification of active layer. (b) Molecular formula of PM6 : Y6. (c) Current−voltage (I−V) characteristics of Blends/ITO structures based on Au/PM6 : Y6, where positive bias is the SET (ON) process and negative bias is the RESET (OFF) process. (d) 50 groups of switching voltage profiles of I−V curves are randomly selected. (e) Weibull distribution statistics of the high resistance state (HRS) and low resistance state (LRS) of 50 I−V curves corresponding to (d). (f) Time retention of high and low resistance states of the device at a reading voltage of 0.1 V. (g) Pulse retention of the device under 5 × 105 pulse stimuli (base = 0.1 V, width = 1 μs, delay = 1.2 μs). (h) Endurance of the device under more than 230 switching cycles (3→0.1→(−2)→0.1→ 3 V).
    Fig. 1. (Color online) The device schematic and electrical properties of Au/PM6 : Y6/ITO. (a) Schematic diagram of device structure and local magnification of active layer. (b) Molecular formula of PM6 : Y6. (c) Current−voltage (IV) characteristics of Blends/ITO structures based on Au/PM6 : Y6, where positive bias is the SET (ON) process and negative bias is the RESET (OFF) process. (d) 50 groups of switching voltage profiles of IV curves are randomly selected. (e) Weibull distribution statistics of the high resistance state (HRS) and low resistance state (LRS) of 50 IV curves corresponding to (d). (f) Time retention of high and low resistance states of the device at a reading voltage of 0.1 V. (g) Pulse retention of the device under 5 × 105 pulse stimuli (base = 0.1 V, width = 1 μs, delay = 1.2 μs). (h) Endurance of the device under more than 230 switching cycles (3→0.1→(−2)→0.1→ 3 V).
    (Color online) The mechanism of Au/PM6 : Y6/ITO device. (a) Fitting curve of SCLC model for PM6 : Y6 blend based device. (b) KPFM spectra of PM6 : Y6 blend based device. (c) The sectional potential curves under different states. (d)−(i) Schematic diagram of resistive memory mechanism, which is divided into six parts.
    Fig. 2. (Color online) The mechanism of Au/PM6 : Y6/ITO device. (a) Fitting curve of SCLC model for PM6 : Y6 blend based device. (b) KPFM spectra of PM6 : Y6 blend based device. (c) The sectional potential curves under different states. (d)−(i) Schematic diagram of resistive memory mechanism, which is divided into six parts.
    (Color online) Photoelectric detection performance of the device. (a) I−V curves of the device under red light (L) and in the dark (D) under different intensities of negative pulse voltage. (b) I−V curves of the device under red light and in the absence of light under different intensities of positive pulse voltage. (c) Working mechanism of PM6 : Y6 blends based photodetector.
    Fig. 3. (Color online) Photoelectric detection performance of the device. (a) IV curves of the device under red light (L) and in the dark (D) under different intensities of negative pulse voltage. (b) IV curves of the device under red light and in the absence of light under different intensities of positive pulse voltage. (c) Working mechanism of PM6 : Y6 blends based photodetector.
    (Color online) The photoelectric modulation and synaptic behavior of PM6 : Y6 device. The photocurrent of the device varies under light pulses of different (a) wavelengths and (b) light intensity; under maximum light intensity of red (level 255 light intensity), the I−t curve of the device was stimulated by increasing (c) negative bias voltage and (d) forward bias voltage (Since there is no current in the device at 0 V, we used 0.01 V instead of 0 V in the experiment to represent the initial state of the device). (e) LTP under red light irradiation with positive voltage stimulation. (f) LTD under red light irradiation with negative voltage stimulation.
    Fig. 4. (Color online) The photoelectric modulation and synaptic behavior of PM6 : Y6 device. The photocurrent of the device varies under light pulses of different (a) wavelengths and (b) light intensity; under maximum light intensity of red (level 255 light intensity), the It curve of the device was stimulated by increasing (c) negative bias voltage and (d) forward bias voltage (Since there is no current in the device at 0 V, we used 0.01 V instead of 0 V in the experiment to represent the initial state of the device). (e) LTP under red light irradiation with positive voltage stimulation. (f) LTD under red light irradiation with negative voltage stimulation.
    (Color online) Image perception of the Au/PM6 : Y6/ITO. (a) Modulation of device photoresponsivity for self-adaptive image formation. (b) SLP-CNN cascaded neural network. (c) Confusion matrices of front-end single-layer perceptron SLP and back-end CNN network. (d) The accuracy obtained by directly identifying unknown visual targets with SLP.
    Fig. 5. (Color online) Image perception of the Au/PM6 : Y6/ITO. (a) Modulation of device photoresponsivity for self-adaptive image formation. (b) SLP-CNN cascaded neural network. (c) Confusion matrices of front-end single-layer perceptron SLP and back-end CNN network. (d) The accuracy obtained by directly identifying unknown visual targets with SLP.
    Xiangrong Pu, Fan Shu, Qifan Wang, Gang Liu, Zhang Zhang. Visual synapse based on reconfigurable organic photovoltaic cell[J]. Journal of Semiconductors, 2025, 46(2): 022403
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