Cathodoluminescence（CL） analysis of ZnSe crystal from 350 nm to 850nm at room temperature

Reng WANG; Cui-Ling JIAO; Ye LU; Qin HUO; Hui QIAO; Xiang-Yang LI

doi:10.11972/j.issn.1001-9014.2020.05.010

Journals >Journal of Infrared and Millimeter Waves >Volume 39 >Issue 5 >Page 601 > Article

Journal of Infrared and Millimeter Waves
Vol. 39, Issue 5, 601 (2020)

Cathodoluminescence（CL） analysis of ZnSe crystal from 350 nm to 850nm at room temperature

Reng WANG, Cui-Ling JIAO, Ye LU, Qin HUO, Hui QIAO, and Xiang-Yang LI

Author Affiliations

Key Laboratory of Infrared Imaging Materials and Detectors，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai200083 ，China

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DOI: 10.11972/j.issn.1001-9014.2020.05.010 Cite this Article

Reng WANG, Cui-Ling JIAO, Ye LU, Qin HUO, Hui QIAO, Xiang-Yang LI. Cathodoluminescence（CL） analysis of ZnSe crystal from 350 nm to 850nm at room temperature[J]. Journal of Infrared and Millimeter Waves, 2020, 39(5): 601 Copy Citation Text

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References

[4] P Miles. High Transparency Infrared Materials-A Technology Update. Optical Engineering, 15, 451(1976).

[5] J S Goela, R L Taylor. Monolithic Material Fabrication by Chemical Vapour eposition. J. Mater. Sci., 23, 4331(1988).

[6] H Hartmann, H Hildisch. Morphological Stability and Crystal Structure of CVD-growth Zinc Selenide. J. Mater. Sci., 26, 4917(1988).

[8] K. AraP, Z.Q. Zhu, T. Sekiguchi. Photoluminescence and cathodoluminescence studies of ZnSe quantum structures embedded in ZnS. Journal of crystal Growth, 184/185, 254-258(1998).

[9] H Li, W Jie. Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport. Journal of Crystal Growth, 257, 110-115(2003).

[10] Wen Hua-Chiang, Wu-Ching Chou et al. Using nanoindentation and cathodoluminescence to investigate the residual stress of ZnSe. Journal of Alloys and Compounds, 625, 52-56(2015).

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