• Optoelectronic Technology
  • Vol. 42, Issue 1, 72 (2022)
Hao WU1, Yuan WU2, Wei WU3, and Shengjiang FANG3
Author Affiliations
  • 1The Military Representative Office of Naval Equipment Department stationed in Wuhu,Wuhu Anhui24000,CHN
  • 2The Third Military Representative Office of Naval Equipment Department stationed in Nanjing,Nanjing 10016,CHN
  • 3The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,CHN
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    DOI: 10.19453/j.cnki.1005-488x.2022.01.014 Cite this Article
    Hao WU, Yuan WU, Wei WU, Shengjiang FANG. Study on the Digital Low⁃light Level Night Vision Device Technology[J]. Optoelectronic Technology, 2022, 42(1): 72 Copy Citation Text show less
    The grades of night illumination conditions
    Fig. 1. The grades of night illumination conditions
    Photo of Photek PH⁃DS026 ICMOS component
    Fig. 2. Photo of Photek PH⁃DS026 ICMOS component
    Comparison of night vision imaging between the two detectors
    Fig. 3. Comparison of night vision imaging between the two detectors
    Circuit structure of APS and PPS
    Fig. 4. Circuit structure of APS and PPS
    The comparison of FSI pix structure and BSI pix structrue
    Fig. 5. The comparison of FSI pix structure and BSI pix structrue
    The comparison of imagings by FSI CMOS and BSI CMOS
    Fig. 6. The comparison of imagings by FSI CMOS and BSI CMOS
    Photo of HAMAMATSU imagEMX2 EMCCD camera
    Fig. 7. Photo of HAMAMATSU imagEMX2 EMCCD camera
    Sensitivity comparison of luminescence imaging of Hela cells with conventional camera and ImagEX2 camera
    Fig. 8. Sensitivity comparison of luminescence imaging of Hela cells with conventional camera and ImagEX2 camera
    ISIE11 sensor and E5011M module based on ISIE11
    Fig. 9. ISIE11 sensor and E5011M module based on ISIE11
    EBCMOS module on night vision helmet and OLED display effect
    Fig. 10. EBCMOS module on night vision helmet and OLED display effect
    探测器优点缺点
    CMOS/CCD成本低,体积小,广泛应用于汽车电子和民用安防探测灵敏度低,夜视成像噪声大
    EMCCD高增益,噪声低,广泛应用于生物细胞成像需要制冷,成本高,体积大
    ICCD/ICMOS具有单光子级别的探测灵敏度(光子计数),功耗低,超高速探测,应用于核辐射探测和水下探测分辨率低,成本高,小型化困难
    EBCMOS/EBCCD探测灵敏度高,低功耗,体积小,特别适用于便携式探测领域国内没有形成相应的产品,技术状态属于样品阶段

    sCMOS/

    qCMOS

    超低噪声,具有光子定量探测能力,相对EMCCD具有更好的灵敏度成本高,体积大,部分需要制冷
    Table 1. Characteristics of the mainstream detectors