IV Characteristics and Analysis for GaAs Based Single Junction Solar Cells with Different Back Surface Fields

Xie Boshi; Dai Pan; Luo Xiangdong; Lu Shulong

doi:10.3788/aos201737.0223002

[1] Jiang Jianping, Sun Chengcheng. Hetero junction principles and devices［M］. Beijing: Publishing House of Electronics Industry, 2010: 13-15.

[2] Chen Mingbo, Cui Rongqiang, Wang Liangxing et al. p-n GaInP2/GaAs tandem solar cells［J］. Acta Physica Sinica, 2004, 53(11): 3632-3636.

[3] Zhu Rongzhen, Wang Rui, Jiang Tian, et al. Research of laser irradiation effect on monocrystalline silicon solar cells and single junction GaAs solar cells［J］. Journal of Infrared and Millimeter Waves, 2015, 34(4): 479-485.

[4] Garg A, Kapoor A, Tripath K N. Laser-induced damaged studies in GaAs［J］. Optics & Laser technology, 2003, 35(1): 21-24.

[5] Xue Qing, Wu Wenhui, Ye Yunxia, et al. Property degradation of GaAs/Ge solar cells after femtosecond laser irradiation［J］. Laser & Optoelectronics Progress, 2015, 52(4): 041405.

[6] Limcharoen A, Pakpum C, Limsuwan P. Apolymer-rich re-deposition technique for non-volatile etching by-products in reactive ion etching systems［J］. Chinese Physics Letters, 2013, 30(7): 75202.

[7] Yan Xingmao, Wang Qingkang. Application of CdSe/ZnSe/ZnSquantum dots in monocrystalline silicon solar cells［J］. Chinese Journal of Luminescence, 2013, 34(10): 1358-1361.

[8] Jiang Jianhui, Wu Kongping, Lu Kailin, et al. Effect of intermediate-band on the ZnO/ZnTe photovoltaic solar cell［J］. Acta Optica Sinica, 2015, 35(9): 0916003.

[9] Yang Xudong, Chen Han, Bi Enbing, et al. Key issues in highly efficient perovskite solar cells［J］. Acta Physica Sinica, 2015, 64(3): 038404.

[10] Meng Qingju, Liu Haibo. Semiconductor physics and devices［M］. Beijing: Science Press, 2009: 55.

[11] Xiong Yankai. Simulation study of III-V GaAs-based compound semiconductor solar cell［D］. Wuhan: Huazhong University of Science and Technology, 2010: 55-58.

[12] Xie Xide, Lu Dong. Band theory of solid［M］. Shanghai: Fudan University Press, 2007: 55.

[13] King R R, Law D C, Edmondson K M, et al. 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells［J］. Applied Physics Letters, 2007, 90(18): 183516.

[14] Xu Y, Shi J, Lü S, et al. Simple way to engineer metal-semiconductor interface for enhanced performance of perovskite organic lead iodide solar cells［J］. ACS Applied Materials & Interfaces, 2014, 6(8): 5651-5656.

[15] Zhai T, Ye M, Li L, et al. Single-crystalline Sb2Se3, nanowires for high-performance field emitters and photodetectors［J］. Advanced Materials, 2010, 22(40): 4530-4533.

[16] He Wei, Lu Shulong, Yang Hui. Initial heteroepitaxial growth and characterization of GaAs on Ge(100) by all-solid-source molecular beam epitaxy［J］. Journal of Infrared and Millimeter Waves, 2016, 35(2): 206-209.

[17] Shi Jiangjan, Wei Huiyun, Zhu Lifeng, et al. S-shaped current-voltage characteristics in perovskite solar cell［J］. Acta Physica Sinica, 2015, 64(3): 038402.

[18] Zhang Hanmou, Ma Shuyi. Study on the current transport mechanisms of the structure Au/(C/SiO2)/p-Si［J］. Journal of Northwest Normal University, 2006, 42(4): 44-46.

[19] Stranks S D, Eperon G E, Grancini G, et al. Electron-hole diffusion lengths exceeding 1 micrometer in an organometal trihalide perovskite absorber［J］. Science, 2013, 342(6156): 341-344.

CLP Journals