In order to fully utilize the infrared photon energy in the solar radiation spectrum,the intermediate band solar cell as a efficient new concept solar cell is proposed.Group II-VI and III-V highly mismatched alloys are promising material systems in the application of high efficiency intermediate- band solar cell.Simulated the performance parameters of ZnTe:O highly mismatched ternary alloys as intrinsic layer by using the solar cell capacitance simulator (SCAPS),and comparison with ZnO/ZnTe and ZnO/ZnTe/ZnTe.The result indicats that the existence of the intrinsic layer and material structure has a significant influence on the solar cell performance.While the ZnTe:O with intermediate-band as the intrinsic layer has better battery performance parameters than ZnO/ZnTe and ZnO/ZnTe/ZnTe.Different types of doping ZnTe:O intrinsic layer by changing the position of Fermi level in the intermediate-band affect the performance of solar cells.The simulation results show that when n-ZnTe:O is used as the intrinsic layer,the battery short circuit current density JSC and efficiency is 52.39 mA/cm2 and 61.58％ ,respectively,which are much higher than those of p-ZnTe:O solar cell.