• Infrared and Laser Engineering
  • Vol. 48, Issue 10, 1016001 (2019)
Li Yingrui1、*, Wu Sen2, Guo Yu1, Xi Shouzhi2, Fu Xu1, Zha Gangqiang1, and Jie Wanqi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201948.1016001 Cite this Article
    Li Yingrui, Wu Sen, Guo Yu, Xi Shouzhi, Fu Xu, Zha Gangqiang, Jie Wanqi. Effect and mechanism of temperature on photon counting performance of CdZnTe detectors[J]. Infrared and Laser Engineering, 2019, 48(10): 1016001 Copy Citation Text show less
    References

    [1] Soldner S A, Bale D S, Szeles C. Dynamic lateral polarization in CdZnTe under high flux X-ray irradiation [J]. IEEE Transactions on Nuclear Science, 2007, 54(5): 1723-1727.

    [2] James R, Brunett B, Heffelfinger J, et al. Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance [J]. Journal of Electronic Materials, 1998, 27(6): 788-799.

    [3] Hao Jia, Zhang Li, Chen Zhiqiang, et al. Multi-energy X-ray imaging technique and its application in computed tomography[J]. CT Theory and Applications, 2011, 20(1): 141-150.(in Chinese)

    [4] Martini M. Semiconductor radiation probes for nuclear medicine and radiobiology the state of the art [J]. IEEE Transactions on Nuclear Science, 2007, 20(1): 294-309.

    [5] Szeles C, Soldner S A, Vydrin S, et al. CdZnTe semiconductor detectors for spectroscopic X-ray imaging [J]. IEEE Transactions on Nuclear Science, 2008, 55(1): 572-582.

    [6] Heismann B J, Henseler D, Niederloehner D, et al. Spectral and spatial resolution of semiconductor detectors in Medical X-and Gamma ray imaging; proceedings of the Nuclear Science Symposium Conference Record (NSS/MIC)[C]//2008 NSS′08 IEEE, 2013.

    [8] Bale D S, Szeles C. Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation: Application to semi-insulating Cd1-xZnxTe [J]. Physical Review B, 2008, 77(3): 035205.

    [9] Bale D S, Soldner S A, Szeles C. A mechanism for dynamic lateral polarization in CdZnTe under high flux X-ray irradiation [J]. Applied Physics Letters, 2008, 92(8): 082101.

    [10] Wilson M D, Barnes P, Cernik R C, et al. Comparison of the X-ray performance of small pixel CdTe and CZT detectors; proceedings of the Nuclear Science Symposium Conference Record (NSS/MIC)[C]//2010 IEEE, 2010.

    [11] Elhadidy H, Dedic V, Franc J, et al. Study of polarization phenomena in n-type CdZnTe [J]. Journal of Physics D: Applied Physics, 2013, 47(5): 055104.

    [12] Schlesinger T E, Toney J E, Yoon H, et al. Cadmium zinc telluride and its use as a nuclear radiation detector material [J]. Materials Science & Engineering R, 2001, 32(4): 103-189.

    Li Yingrui, Wu Sen, Guo Yu, Xi Shouzhi, Fu Xu, Zha Gangqiang, Jie Wanqi. Effect and mechanism of temperature on photon counting performance of CdZnTe detectors[J]. Infrared and Laser Engineering, 2019, 48(10): 1016001
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