[1] Jin Lufan, Zhang Yating, Wang Haiyan, et al.. Acceleration aging of InGaAs PIN photoelectric detectors[J]. Chinese J Lasers, 2014, 41 (10): 1008002.

[2] Liu Yang, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD [J]. Chinese J Lasers, 2014, 41(11): 1106001.

[3] Xu Yingtian, Li Ying, Long Beihong, et al.. Studying the influence of material parameters on quantum efficiency of In0.53Ga0.47As photovoltaic detector[J]. Optoelectronics and Advanced Materials – Rapid Communications, 2012, 6(11-12): 1009-1014.

[4] Yuan Huibo, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of GaAsP/GaInP quantum well grown by metal-organic chemical vapor deposition[J]. Chinese J Lasers, 2014, 41(5):0506002.

[5] Duan Xiaofeng, Huang Yongqing, Ren Xiaomin, et al.. High-efficiency InGaAs/InP photodetector incorporating SOI-based concentric circular subwavelength gratings[J]. IEEE Photonics Technology Letters, 2012, 24(10): 863-865.

[6] Liu Shaoqing, Han Qin, Zhu Bin, et al.. Tunable metamorphic resonant cavity enhanced InGaAs photodetectors grown on GaAs substrates [J]. Chinese Physics Letters, 2012, 29(3): 38501.

[7] Zhao Fang, Zhang Yunyan, Song Jingjing, et al.. High internal quantum efficiency blue light-emitting diodes with triangular shaped InGaN/ GaN multiple quantum wells [J]. Chinese Journal of Luminescence, 2013, 34(1): 66-72.

[8] Li Guobin, Chen Changshui, Liu Songhao. The effects of In content on the LED photoelectric performance InGaN/GaN [J]. Chinese Journal of Luminescence, 2013, 34(9): 1233-1239.

[9] Zhao Xu, Miao Guoqing, Zhang Zhiwei, et al.. Structural design and optimization of novel composite cap extended wavelength InGaAs infrared detector[J]. Chinese Journal Luminescence, 2015, 36(1):75-79.

[10] Wang Hongpei, Wang Guanglong, Qiu Peng, et al.. Design and characteristics analysis of single photon detector based on quantum-dot field effect transistor [J]. Chinese J Lasers, 2013, 40(1): 0118001.

[11] Lian Ruikai, Li Lin, Fan Yaming, et al.. Effects of AlN buffer layer thickness and Al pre-treatment on properties of GaN/Si(111) epilayer [J]. Chinese J Lasers, 2013, 40(1): 0106001.