AlGaAs Short Wavelength Integrated Superluminescent Source

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 18 >Issue 6 >Page 789 > Article

Acta Optica Sinica
Vol. 18, Issue 6, 789 (1998)

AlGaAs Short Wavelength Integrated Superluminescent Source

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²Material Research Center, Northwesten University, Evanston, IL60208-3108,U.S.A.

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AlGaAs Short Wavelength Integrated Superluminescent Source[J]. Acta Optica Sinica, 1998, 18(6): 789 Copy Citation Text

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Abstract

A novel semiconductor integrated source——AlGaAs short wavelength superluminescent integrated diode has been suggested and demonstrated. It uses direct coupling of the superiuminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain—guide of oxide—stripe are used in the device. 57 mW superlumineseent output power with 20 nm spectal width (FWHM) are obtained. The otical gain of the amplifier in the integrated device is about 21 dB.

Keywords

integrated optical sources semiconductor amplifiers superluminescent diodes

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