Double Q-switched 946 nm laser with MgO:LN electro-optic crystal and MoSe2 saturable absorber

Bing Bai; Yang Bai; Diao Li; Yanxiao Sun; Jianlin Li; Jintao Bai

doi:10.3788/COL201816.031402

Journals >Chinese Optics Letters >Volume 16 >Issue 3 >Page 031402 > Article

Chinese Optics Letters
Vol. 16, Issue 3, 031402 (2018)

Double Q-switched 946 nm laser with MgO:LN electro-optic crystal and MoSe₂ saturable absorber

Bing Bai^1、2, Yang Bai^1、2、*, Diao Li^1、2, Yanxiao Sun^1、2, Jianlin Li^1、2, and Jintao Bai^1、2

Author Affiliations

¹Institute of Photonics and Photon-Technology, National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), Northwest University, Xi’an 710069, China

²Shaanxi Engineering Technology Research Center for Solid State Lasers and Application, Xi’an 710069, China

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DOI: 10.3788/COL201816.031402 Cite this Article Set citation alerts

Bing Bai, Yang Bai, Diao Li, Yanxiao Sun, Jianlin Li, Jintao Bai. Double Q-switched 946 nm laser with MgO:LN electro-optic crystal and MoSe₂ saturable absorber[J]. Chinese Optics Letters, 2018, 16(3): 031402 Copy Citation Text

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Fig. 1. (a) Raman spectrum of MoSe2 film. Inset: microscopic morphology of MoSe2 film, scale bar: 40 μm. (b) Morphology (inset) and thickness profile (the white line in the inset) of the MoSe2 film measured by AFM.

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(a) Linear absorption spectrum of monolayer MoSe2 film. (b) Normalized nonlinear optical transmittance (blue dots) measured with Z-scan apparatus by using ultrashort pulsed laser (1030 nm, 340 fs) and theoretical fitting (red line) of the monolayer MoSe2.

Fig. 2. (a) Linear absorption spectrum of monolayer MoSe2 film. (b) Normalized nonlinear optical transmittance (blue dots) measured with Z-scan apparatus by using ultrashort pulsed laser (1030 nm, 340 fs) and theoretical fitting (red line) of the monolayer MoSe2.

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Fig. 3. Sketch of the experimental setup (top view). Inset: monolayer MoSe2 SA mirror.

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Fig. 4. Pulse peak power versus incident pump energy of LD. Inset: sub-pulses in a pulse train for MoSe2 passively Q-switching operation.

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Fig. 5. Output performances of 946 nm pulse laser for actively EO, MoSe2 passively, and double Q-switching operation. (a) Single pulse energy, (b) pulse width, (c) peak power, and (d) symmetrical factor.

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Fig. 6. Output pulse profiles of (a) actively EO, (b) MoSe2 passively, and (c) double Q-switching operation.

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Fig. 7. Linewidth of 946 nm pulse laser with actively EO, MoSe2 passively, and double Q-switching operation.

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Fig. 8. 2D and 3D near-field beam profiles of (a) actively EO, (b) MoSe2 passively, and (c) double Q-switching operation.

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				Peak-to-peak Instability
Q-switching Mode	Maximum Single Pulse Energy (mJ)	Pulse Width (ns)	Peak Power (kW)	Duration	Energy	Spectral Linewidth (nm)	Symmetrical Factor
EO-actively	5.48	20.2	271	$\pm 4.66 %$	$\pm 5.78 %$	0.245	0.38
${MoSe}_{2}$ -passively	0.106	51.5	2.06	$\pm 6.18 %$	$\pm 8.14 %$	0.197	0.92
Double	3.15	9.1	346	$\pm 2.87 %$	$\pm 3.42 %$	0.173	0.87