STRUCTURAL AND OPTICAL PROPERTIES OF Ba0.9Sr0.1TiO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION ROUTES

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[1] Baumert B A, Chang L H, Matsuda A, et al. A study of barium strontium titanate thin films for use in by pass capacitors. J. Mater. Res., 1998, 13(1):197

[2] Zafar Sufi, Jones Rogert E, Jiang Bo, et al. The electronic conduction mechanism in barium strontium titanate thin films. Appl. Phys. Lett., 1998, 73:3533

[3] Chang Wontae, Horwitz James S, Carter Adriaan C, et al. The effect of annealing on microwave properties of Ba0.5Sr0.5TiO3 thin films. Appl. Phys. Lett., 1999, 74:1033

[4] Nagaraj B, Sawhney T, Perusse S, et al. (Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory application. Appl. Phys. Lett., 1999, 74:3194

[5] Park B H, Gim Y, Fan Y, et al. High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates. Appl. Phys. Lett., 2000, 77:2587

[6] Dietz G W, Schumacher M, Waser R, et al. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories. J. Appl. Phys., 1997, 82:2359

[7] Chu C M, Lin P. Electric properties and crystal structure of (Ba,Sr)TiO3 films prepared at low temperatures on a LaNiO3 electrode by radio-frequency magnetron sputtering. Appl. Phys. Lett., 1997, 70:249

[8] Cheng Jian-Gong, Meng Xiang-Jian, Li Biao, et al. Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution. Appl. Phys. Lett., 1999, 75:2132

[9] Cheng Jian-Gong, Meng Xiang-Jian, Tang Jun, et al. Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05M precursor solution by sol-gel process. Appl. Phys. Lett., 1999, 75:3402

[10] Cheng Jian-Gong, Tang Jun, Chu Jun-Hao, et al. Pyroelectric properties in sol-gel derived barium strontium titantate thin films using a highly diluted precursor solution. Appl. Phys. Lett., 2000, 77:1035

[11] Im Jaemo,Auciello O, Baumann P K, et al. Composition-control of magnetron-sputter-deposited Ba1-xSrxTi1+yO3+z thin films for voltage tunable devices. Appl. Phys. Lett., 2000, 76:625

[12] Yoon S, Lee J, Safari A. Preparation of thin film Ba0.5Sr0.5TiO3 by the laser ablation technique and electrical properties. J. Appl. Phys., 1994, 76:2999

[13] Chern C S, Liang S, Shi Z, et al. Heteroepitaxial growth of BST/YBCO by plasma-enhanced metalorganic chemical vapor deposition. Appl. Phys. Lett., 1994, 64:3181

[14] Tahan D M, Safari A, Klein L. Preparation and characterization of Ba1-xSrxTiO3 thin films by a sol-gel technique. J.Am. Ceram. Soc., 1996, 79(6):1593

[15] Meng X J, Ma Z X, Sun J L, et al. Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple MOD technique for the highly oriented PbZr0.3Ti0.7O3 thin films. Thin Solid Films, 2000,372:271

[18] Kamalasananm M N, Chandra Subhas, Joshi P C, et al. Structural and optical properties of sol-gel-processed BaTiO3 ferroelectric thin films. Appl. Phys. Lett., 1991,59(27):3547

[19] Tcheliebou F, Ryu H S, Hong C K. On the microstructure and optical properties of Ba0.5Sr0.5TiO3 films. Thin Solid Films, 1997, 305:30

[20] Thomas Reji, Dube D C, Kamalasanan M N, et al. Optical and electrical properties of BaTiO3 thin films prepared by chemical solution deposition. Thin Solid Films, 1999, 346:212