• Infrared and Laser Engineering
  • Vol. 37, Issue 1, 34 (2008)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InGaAs/GaAs quantum dot infrared photodetector[J]. Infrared and Laser Engineering, 2008, 37(1): 34 Copy Citation Text show less
    References

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    [3] URAYAMA J,NORRIS T,SINGH J,et al.Observation of phonon bottleneck in quantum dot electronic relaxation[J].Phys Rev Lett,2001,86:4930-4933.

    [4] RYZHII V.The theory of quantum-dot infrared phototransistors[J].Semicond Sci Technol,1996,11:759-765.

    [5] KIM E T,MADHUKAR A,YE Z,et al.High detectivity InAs quantum dot infrared photodetectors[J].Appl Phys Lett,2006 84(17):3277-3278.

    [6] SZAFRANIEC J,TSAO S,ZHANG W,et al.High-detectivity quantum-dot infrared photodetectors grown by metalorganicchemical -vapor deposition[J].Appl Plays Lett,2006,88:121102-121104.

    [7] GUNAPALA S D,BANDARA S V,HILL C J,et al.Demonstration of 640×512 pixels long-wavelength infrared(LWIR)quantum dot infrared photodetector(QDIP)imaging focal plane array[J].Infrared Physics & Technology,2007,50:149-155.

    [8] PHILLIPS J.Evaluation of the fundamental properties of quantum dot infrared detectors[J].J Appl Phys,2002,91:459O-4594.

    [9] MA W Q,SUN Y W,YANG X J,et al.Self-organized hexagonal ordering of quantum dot arrays[J].Nanotechnology,2006,17:5765-5768.

    [10] MA W Q,SUN Y W,YANG X J,et al.Enhanced infrared absorption of spatially ordered quantum dot arrays[J].Infrared Phys & Technology,2007,50:162-165.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InGaAs/GaAs quantum dot infrared photodetector[J]. Infrared and Laser Engineering, 2008, 37(1): 34
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