Author Affiliations
1 Liaoshen Industrial Group Co., Ltd., Shenyang, Liaoning 110045, China1 School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, Chinashow less
Fig. 1. Patch element of crossed dipoles. (a) Arrangement of elements; (b) transmission curves with different sizes
Fig. 2. Optically controlled active FSS structure of cross dipole slot-element
Fig. 3. Optically controlled active FSS of cross dipole slot-element. (a)Structure size; (b)size and arrangement of elements
Fig. 4. Spectra of optically controlled active FSS before and after illumination
Fig. 5. Technological process of preparing optically controlled active FSS
Fig. 6. Preparation of photoconductive FSS. (a) Coating photoconductive film; (b) spin coating; (c) exposure and development; (d) corrosion; (e) cleaning the photoresist; (f) photo of sample
Fig. 7. Effect of doping amount of CdSe on spectral response
Fig. 8. Effect of doping mole fraction of Cu on square resistance
Fig. 9. Preparation of metal FSS. (a)Spin coating; (b) exposure and development; (c) metal plating; (d) cleaning the photoresist; (e)sample of optically controlled active FSS
Fig. 10. Effect of annealing temperature on photoconductive thin film. (a) I-V logarithmic curves at different annealing temperatures; (b) relationship between annealing temperature and film contact square resistance
Fig. 11. (a) I-V curves at different annealing time; (b) relationship between annealing time and film contact square resistance
Fig. 12. Bright square resistance of photoconductive thin film irradiated with different frequencies light
Fig. 13. Bright square resistance of photoconductive thin film irradiated with different optical powers
Fig. 14. Schematic diagram of the measurement
Fig. 15. Curves of measurement
Fig. 16. Effect of optical power on shielding
Mole fraction of Cu /% | Dark square resistance /(MΩ·□-1) | Bright square resistance /(kΩ·□-1) | Mole fraction of Cu /% | Dark square resistance /(MΩ·□-1) | Bright square resistance /(kΩ·□-1) |
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0 | 1.45 | 1.2 | 0.007 | 110.0 | 3.3 | 0.001 | 4.10 | 1.4 | 0.008 | 162.0 | 3.6 | 0.002 | 12.4 | 1.7 | 0.009 | 206.3 | 3.9 | 0.003 | 18.9 | 2.0 | 0.010 | 295.0 | 4.2 | 0.004 | 36.4 | 2.4 | 0.011 | 371.1 | 4.4 | 0.005 | 49.8 | 2.8 | 0.012 | 485.3 | 4.8 | 0.006 | 78.2 | 3.1 | 0.013 | 594.2 | 5.8 |
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Table 1. Dark/bright square resistance of photoconductive thin films at different doping amounts for Cu
Optical power /(mW∙cm-2) | Dark square resistance /(MΩ·□-1) | Bright square resistance /(kΩ·□-1) |
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50 | 29 | 10 | 100 | 29 | 5 | 150 | 29 | 1 | 200 | 29 | 0.1 | 250 | 29 | 0.09 | 300 | 29 | 0.085 |
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Table 2. Test results for dark/bright square resistance of photoconductive thin film in different optical powers