ESD Failure Analysis and Improvement of a Special Digital Circuit for Multi-Power Supply Domain

QIAN Lingli; HUANG Wei

doi:10.13911/j.cnki.1004-3365.200472

[1] LIU J Z, QIAN L L, RUI T, et al. Self-triggered stacked silicon-controlled rectifier structure (STSSCR) for on-chip electrostatic discharge (ESD) protection ［J］. Microelec Reliab, 2017, 71(4): 1-5.

[2] KER M D, LIN C Y. High-voltage-tolerant ESD clamp circuit with low standby leakage in nanoscale CMOS process ［J］. IEEE Trans Elec Dev, 2010, 57(7): 1636-1641

[3] SHRIVASTAVA M, GOSSNER H. A review on the ESD robustness of drain extended MOS devices ［J］. IEEE Trans Dev & Mater Reliabil, 2012, 12(4): 615-625.

[4] LEE J HG, IYER N M, PRABHU M, et al. ESD robust fully salicided 5-V integrated power MOSFET in submicron CMOS ［J］. IEEE Elec Dev Lett, 2017, 38(5): 623-625.

[5] KHAZHINSKY M G, MILLER J W, STOCKINGER M, et al. Engineering single NMOS and PMOS output buffers for maximum failure voltage in advanced CMOS technologies ［C］ // Electrical Overstress / Electrostatic Discharge Symp. Grapevine, TX, USA. 2004: 255-264.

[6] POON S, MALONEY T. New considerations for MOSFET power clamps ［C］ // Electrical Overstress/ Electrostatic Discharge Symp. Charlotte, NC, USA. 2002: 1-5.

[7] SMITH J, BOSELLI G. A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies ［C］ // Electrical Overstress / Electrostatic Discharge Symp. Las Vegas, NV, USA. 2003: 8-16.

[8] TORRES C A, MILLER J W, STOCKINGER M, et al. Modular, portable, and easily simulated ESD protection networks for advanced CMOS technologies ［C］ // Electrical Overstress / Electrostatic Discharge Symp. Portland, OR, USA. 2001: 82-95.

[9] KER M D, CHANG W J. ESD protection design with on-chip ESD bus and high-voltage-tolerant ESD clamp circuit for mixed-voltage I/O buffers ［J］. IEEE Trans Elec Dev, 2008, 55(6): 1409-1416.

[10] XIN W, SHI Z T, LIU J, et al. Post-Si programmable ESD protection circuit design: mechanisms and analysis ［J］. IEEE J Sol Sta Circ, 2013, 48(5): 1237-1249.