• Opto-Electronic Advances
  • Vol. 3, Issue 1, 190027-1 (2020)
Philipp Graus1、*, Thomas B. Möller1, Paul Leiderer1, Johannes Boneberg1, and Nikolay I. Polushkin2
Author Affiliations
  • 1Department of Physics, University of Konstanz, 78457 Konstanz, Germany
  • 2Institute for Physics of Microstructures of RAS, 603950 GSP-105 Nizhny Novgorod, Russian
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    DOI: 10.29026/oea.2020.190027 Cite this Article
    Philipp Graus, Thomas B. Möller, Paul Leiderer, Johannes Boneberg, Nikolay I. Polushkin. Direct laser interference patterning of nonvolatile magnetic nanostructures in Fe60Al40 alloy via disorder-induced ferromagnetism[J]. Opto-Electronic Advances, 2020, 3(1): 190027-1 Copy Citation Text show less
    (a) Schematic of the DLIP geometry with four laser beams that impinge on the sample surface and their superposition provides the interference pattern. (b) Laser intensity distribution simulated for all the beams of TE polarization and equal intensity, which incident at the same angle θ, while the azimuthal angles are φi=π(i-1)/2, where i=1, 2, 3, 4. Under such parameters, the lattice periodicity is given by Λ=λ/(2sinθ)33. In our experiments, Λ was varied between 0.4 and 2.3 µm. (c) MFM image of a Fe60Al40 35 nm thick sample treated by DLIP with Λ=0.4 μm and (d) corresponding topography.
    Fig. 1. (a) Schematic of the DLIP geometry with four laser beams that impinge on the sample surface and their superposition provides the interference pattern. (b) Laser intensity distribution simulated for all the beams of TE polarization and equal intensity, which incident at the same angle θ, while the azimuthal angles are φi=π(i-1)/2, where i=1, 2, 3, 4. Under such parameters, the lattice periodicity is given by Λ=λ/(2sinθ)33. In our experiments, Λ was varied between 0.4 and 2.3 µm. (c) MFM image of a Fe60Al40 35 nm thick sample treated by DLIP with Λ=0.4 μm and (d) corresponding topography.
    MFM images of patterned structures that have different periodicities Λ of the interference pattern. (a) 0.4 μm, (b), 0.6 μm, and (c) 2.3 μm.
    Fig. 2. MFM images of patterned structures that have different periodicities Λ of the interference pattern. (a) 0.4 μm, (b), 0.6 μm, and (c) 2.3 μm.
    Correspondence between the laser-induced topographical relief (a) and MFM response (b). The bumps on the Fe60Al40 surface, occurring within maxima of light intensity (solid contours), are significantly smaller in their lateral dimensions than the regions in which the MFM response is nonzero. One of the patterned magnetic entities is indicated by dashed contour.
    Fig. 3. Correspondence between the laser-induced topographical relief (a) and MFM response (b). The bumps on the Fe60Al40 surface, occurring within maxima of light intensity (solid contours), are significantly smaller in their lateral dimensions than the regions in which the MFM response is nonzero. One of the patterned magnetic entities is indicated by dashed contour.
    (a) Fe-based unit cells (top) and the (100) projections (bottom) of the atomic structure in the chemically ordered B2 and disordered A2 states of the FexAl100-x (x~50 at.%) alloy. The open boxes are vacancies in the lattice through which the atomic jumps occur for relaxation of the system to its thermodynamic equilibrium. In the A2 state there are magnetic percolation paths (dashed lines). (b) Simulated change of magnetic moments in Fe under the transformation from the B2 to A2 state21.
    Fig. 4. (a) Fe-based unit cells (top) and the (100) projections (bottom) of the atomic structure in the chemically ordered B2 and disordered A2 states of the FexAl100-x (x~50 at.%) alloy. The open boxes are vacancies in the lattice through which the atomic jumps occur for relaxation of the system to its thermodynamic equilibrium. In the A2 state there are magnetic percolation paths (dashed lines). (b) Simulated change of magnetic moments in Fe under the transformation from the B2 to A2 state21.
    (a) Absorbed fluence Fabs as a function of coordinate along the dashed horizontal line in Fig. 1(b) with indications of different positions: 1. maxima of light intensity, where Fabs=(1–R)F*>Fm (Fm is the absorbed fluence required for raising the temperature up to the melting point Tm); 2. locations outside the melted zones, in which Fc Fabs Fm (Fc is the absorbed fluence required for raising the temperature up to Tc); 3. local minima of light intensity. (b) T(t) dependencies calculated in positions 1, 2, and 3, where the absorbed fluence is respectively Fabs=70 mJ/cm2, Fabs=65 mJ/cm2, and Fabs=35 mJ/cm2. As temperature elevation was calculated with no taking into account effects of melting and resolidification18, 20, the T(t) dependence calculated at Fabs>Fm is shown by the dashed curve for t>tm, where tm is the moment of time at which the temperature rise reaches Tm. (c) Unit cell of the interference pattern with the marks for positions in which the T(t) dependences plotted in (b) are simulated. (d) Non-equilibrium vacancy concentration cv versus t in zone(s) 2 at Tmax=Tm. The inset shows the asymptotic value cv(∞) at different temperature elevations Tmax-Tc up to Tmax=Tm. (e) Concentration wave (superstructure) amplitude A(t)/A(0) as a function of time t in zone(s) 2 at different temperature elevations Tmax-Tc up to Tmax=Tm.
    Fig. 5. (a) Absorbed fluence Fabs as a function of coordinate along the dashed horizontal line in Fig. 1(b) with indications of different positions: 1. maxima of light intensity, where Fabs=(1–R)F*>Fm (Fm is the absorbed fluence required for raising the temperature up to the melting point Tm); 2. locations outside the melted zones, in which Fc < Fabs < Fm (Fc is the absorbed fluence required for raising the temperature up to Tc); 3. local minima of light intensity. (b) T(t) dependencies calculated in positions 1, 2, and 3, where the absorbed fluence is respectively Fabs=70 mJ/cm2, Fabs=65 mJ/cm2, and Fabs=35 mJ/cm2. As temperature elevation was calculated with no taking into account effects of melting and resolidification18, 20, the T(t) dependence calculated at Fabs>Fm is shown by the dashed curve for t>tm, where tm is the moment of time at which the temperature rise reaches Tm. (c) Unit cell of the interference pattern with the marks for positions in which the T(t) dependences plotted in (b) are simulated. (d) Non-equilibrium vacancy concentration cv versus t in zone(s) 2 at Tmax=Tm. The inset shows the asymptotic value cv(∞) at different temperature elevations Tmax-Tc up to Tmax=Tm. (e) Concentration wave (superstructure) amplitude A(t)/A(0) as a function of time t in zone(s) 2 at different temperature elevations Tmax-Tc up to Tmax=Tm.
    MFM images of the patterned Fe60Al40 surface at the edge of the irradiated zone. The images were taken (a) before and (b) after thermal annealing in a furnace at T=770 K for one hour. (c) Cross section of the MFM image before and after thermal annealing
    Fig. 6. MFM images of the patterned Fe60Al40 surface at the edge of the irradiated zone. The images were taken (a) before and (b) after thermal annealing in a furnace at T=770 K for one hour. (c) Cross section of the MFM image before and after thermal annealing
    Philipp Graus, Thomas B. Möller, Paul Leiderer, Johannes Boneberg, Nikolay I. Polushkin. Direct laser interference patterning of nonvolatile magnetic nanostructures in Fe60Al40 alloy via disorder-induced ferromagnetism[J]. Opto-Electronic Advances, 2020, 3(1): 190027-1
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